Modulating spintronic properties of transition metals doped GaN nanotubes with high Curie temperature

Abstract

Between the ferromagnetic semiconductors of the III‐V group, the transition metals (TMs) doped gallium nitride (Ga, TM)N diluted magnetic semiconductor (DMS) shows the most well‐understood and promising applications in spintronic, due to its high Curie temperature. In this research, electronic and magnetic properties of pure armchair (3, 3) and zigzag (5, 0) gallium nitride nanotubes (GaNNTs) and doped with TMs are investigated using the spin‐polarized density functional theory. The spin‐polarized DOS revealed that pure zigzag and armchair GaNNTs are nonmagnetic semiconductors with a direct and indirect bandgap, respectively, in contrast, TMs doped GaNNTs are DMS or half metals (HM). Our results show a high Curie temperature of more than 823 K for Cr and Mn doping, indicating may be good room‐temperature ferromagnetic material for spintronic applications in the future. 11% Cr and Mn atoms doped (3, 3) GaNNT are HM with 100% spin polarization and appear to be good candidates for spintronic applications and especially as spin filter devices.

Tuning inter‐wall spacing and structural properties of double‐walled gallium arsenide nanotubes

“…In recent years, the compounds of the III–V group, due to the distinct characteristics of this particular group, have garnered the interest of many researchers [1–11]. The importance of Gallium Arsenide (GaAs) as a semiconductor with high speed is based on the high velocity of electrons (from 4.1 × 10 7 cm/s to 5 × 10 7 cm/s) and the high mobility of electrons (8500 cm 2 /Vs), in comparison to silicon with the speed of the electrons about 6 × 10 6 cm/s.…”

DFT study of electronic and structural properties of single‐walled gallium nitride nanotubes

“…All GaNNTs are semiconductors when compared to CNTs [16,17]. Because of the intriguing characteristics of GaNNTs, including their high chemical stability, distinctive mechanical capabilities, high thermal stability, and most importantly, their high biocompatibility, the scientific community has recently given them more attention than CNTs [10,[16][17][18][19][20][21][22][23][24][25]. Also, different groups have studied GaN nano-structures [10,[16][17][18][19][20][21][22][23][24][25].…”

“…Because of the intriguing characteristics of GaNNTs, including their high chemical stability, distinctive mechanical capabilities, high thermal stability, and most importantly, their high biocompatibility, the scientific community has recently given them more attention than CNTs [10,[16][17][18][19][20][21][22][23][24][25]. Also, different groups have studied GaN nano-structures [10,[16][17][18][19][20][21][22][23][24][25]. For the synthesis of single-crystal GaNNTs on zinc oxide nanowire templates, Goldberger and coworkers presented an epitaxial casting technique [10,22].…”

“…The diluted magnetic semiconductors are mostly group (II-VI) and (III-V) semiconductor compounds, doped with transition metal (TM) impurities. Due to their high spin stability and ferromagnetic characteristics, they are used as highly spin-polarized injectors in the spintronic industry [2,5,6,21,[23][24][25]. The favorable magnetic coupling in TM-doped BN and AlN nanosheets has been taken into account by Movlarooy and her coworkers [2,6].…”

“…Although several types of research on experimental and theoretical features of GaN structures have been conducted [10,[16][17][18][19][20][21], there has been very little work on the structural and electronic characteristics of single-walled GaN nanotubes. Motivated by the unique properties of synthesized GaN nanotubes [10,22] applicable in powerful high-temperature electronic and optoelectronic devices, as mentioned above, in our previous work we investigated the magnetic properties of transition metals doped GaN nanotubes with high Curie temperature for spintronic application [21]. In this work, the ab initio first-principles calculation method is used to investigate the structural and electronic characteristics of the zigzag and armchair SWGaNNTs for applications in powerful high-temperature electronic, blue light emitters and optoelectronic devices.…”