Two-dimensional
(2D) magnetic materials can be used to construct
multifunctional electronic and spintronic devices attributed to their
unique 2D restricted magnetic properties. However, some magnetic materials
are non-van der Waals materials, and the substrate used in chemical
vapor deposition (CVD) is usually a van der Waals substrate like mica.
This kind of substrate can cause transfer problems and increase the
complexity of equipment fabrication or magnetic measurement. It is
meaningful to further optimize the current production process for
realizing good repeatability and simple fabrication. Growing materials
on SiO2/Si can directly make electronic devices and measure
magnetic properties. Herein, we use potassium hydroxide to modify
a SiO2/Si substrate and succeed in growing Cr2X3 (X = S, Se, and Te) directly on the SiO2/Si surface by a CVD method. OH– is attached to
the surface of SiO2/Si, thereby inhibiting the growth of
thin layered Cr2X3 along the [001] zone axis.
Through density function theory calculation, it is verified that the
formation energy of Cr2S3 and SiO2/Si heterojunction can be enlarged by introducing OH–, which is beneficial to the growth of Cr2X3 on the SiO2/Si surface. At the same time, we have also
achieved Cr2S3 and Cr2Se3 with controlled size and thickness. The thinnest thickness of the
three materials on SiO2/Si can be close to 1 unit cell.
Cr2S3, Cr2Se3, and Cr2Te3 nanosheets exhibit ferrimagnetic, spin glass,
and ferromagnetic behavior, respectively. This work can provide a
new method for the growth of non-van der Waals 2D materials on SiO2/Si, and it is of great significance to the fabrication of
spintronic devices.