Modulated carrier concentration and enhanced seebeck coefficient of Ge2Sb2Te5 thin films by Sn doping

Miao, Jiale; Qian, Dongjie; Wang, Pengfei; Sun, Shuang; Yuan, Pengyue; Zhou, Peng; Yuan, Yanyan; Lan, Rui

doi:10.1016/j.vacuum.2022.110881

Cited by 6 publications

(2 citation statements)

References 47 publications

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“…However, TE solutions for microelectronic applications need to operate close to room temperature (RT), TE efficiency being mainly dependent on intrinsic material properties, such as thermal conductivity ( κ ), electrical conductivity ( σ ), and Seebeck coefficient ( S ), TE technology improvement requires either the development of new materials, or to develop engineering methods allowing TE properties of current materials to be improved. Concurrent with κ engineering, recent band engineering solutions were proposed to increase the TE power factor PF = S 2 σ 6 , such as modulation doping 7 , 8 , resonance levels 9 , 10 , energy filtering 11 – 13 , and quantum confinement 14 . The thermopower S is related to the Peltier coefficient П such as S = П/ T , П corresponding to the energy carried by the mobile charge carriers in the material per unit of charge.…”

Section: Introductionmentioning

confidence: 99%

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Portavoce

Assaf

Bertoglio

et al. 2023

Sci Rep

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Magnetic materials may be engineered to produce thermoelectric materials using spin-related effects. However, clear understanding of localized magnetic moments (µI), free carriers, and Seebeck coefficient (S) interrelations is mandatory for efficient material design. In this work, we investigate µI influence on the spin-dependent S of model ferromagnetic thin films, allowing µI thermal fluctuations, ordering, and density variation influence to be independently investigated. µI influence on free carrier polarization is found to be of highest importance on S: efficient coupling of free carrier spin and localized magnetic moment promotes the increase of S, while spin-dependent relaxation time difference between the two spin-dependent conduction channels leads to S decrease. Our observations support new routes for thermoelectric material design based on spin-related effects in ferromagnetic materials.

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Section: Introductionmentioning

confidence: 99%

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Portavoce

Assaf

Bertoglio

et al. 2023

Sci Rep

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“…Toberer et al [18] revealed that the choice of A-site element has an important effect on the hole mobility and thermoelectric power. A way to obtain high Seebeck coefficient and low electrical resistivity is to reduce the carrier concentration by alloying [19,20].…”

Section: Introductionmentioning

confidence: 99%

Effect of Sr substitution on the structural, electronic and thermoelectric properties of the Zintl-phase compound BaZn ₂ Sb ₂

2023

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The structural, electronic, and thermoelectric properties of Ba1−xSrxZn2Sb2 (x = 0, 0.25, 0.5, and 0.75) are studied by the full-potential linearized augmented plane wave (FP-LAPW) method in the density functional theory (DFT) framework. The band structure and density of states of the studied system are calculated using PBE functional and Tran-Blaha modifed Becke-Johnson (mBJ) exchange potential. Ourgeneralized gradient approximation (GGA) results show that the system exhibits a phase transition from the orthorhombic phase to the trigonal one at x = 60%. With the TB-mBJ potential these compounds are narrow-gap semiconductors with a direct band gap for x = 0 and 0.25, whereas an indirect band gap semiconductor for x = 0.5 and 0.75. The thermoelectric properties are calculated using the semi-classical Boltzmann transport theory. The temperature dependence of thermoelectric transport properties of these compounds is discussed and compared with available experimental data. Substitution of Ba by Sr leads to an increase in the figure of merit (ZT). The Seebeck coefficients and ZT of Ba0.75Sr0.25Zn2Sb2 and Ba0.5Sr0.5Zn2Sb2 are even larger than those of BaZn2Sb2. The predicted highest ZT values are found for x = 0.5 at higher temperature.

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Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study

Cao,

Cao

2024

J Comput Electron

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Modulated carrier concentration and enhanced seebeck coefficient of Ge2Sb2Te5 thin films by Sn doping

Cited by 6 publications

References 47 publications

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Effect of Sr substitution on the structural, electronic and thermoelectric properties of the Zintl-phase compound BaZn ₂ Sb ₂

Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study

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Modulated carrier concentration and enhanced seebeck coefficient of Ge2Sb2Te5 thin films by Sn doping

Cited by 6 publications

References 47 publications

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin films

Effect of Sr substitution on the structural, electronic and thermoelectric properties of the Zintl-phase compound BaZn 2 Sb 2

Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study

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Effect of Sr substitution on the structural, electronic and thermoelectric properties of the Zintl-phase compound BaZn ₂ Sb ₂