Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

Ehwald, K.‐E.; Knolll, D.; Heinemann, B.; Chang, Kang-Ming; Mauntel, R.; Lim, IkSung; Steele, John W.; Schley, P.; Tillack, Bernd; Wolff, A.; Blum, K.; Winkler, Wolfgang; Pierschel, M.; Jagdhold, U.; Barth, R.; Grabolla, T.; Erzgraber, H.J.; Hunger, B.; Osten, H. J.

doi:10.1109/iedm.1999.824216

Cited by 18 publications

(8 citation statements)

References 2 publications

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“…Recently Lanzerotti et al ([59], and references therein) and others [60][61][62][63][64][65][66][67][69][70][71] have done extensive work on the outdiffusion of boron and creation of parasitic barriers. Lanzerotti et al [59] have investigated the effect of C on the outdiffusion of B.…”

Section: Parasitic Barriers and Their Suppression By Cmentioning

confidence: 99%

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SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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SiGe technology has acquired great importance in recent years. Recent advances made in the SiGe HBT technology for analogue applications are discussed in this two-part review paper. Strain, stability, reliability, mobility of charge carriers, bandgap narrowing and effective density of states of SiGe layers have been discussed in part I. This paper (part II) is devoted to the HBTs: their design and performance. The two designs of the HBTs developed by IBM and by Daimler-Benz are discussed. Their relative merits and constraints imposed by the stability criterion on each design are described. The technology used for implementing the two designs is also described. The dc and ac characteristics and Ge profiles needed to optimize different figures of merit are discussed in detail. The parasitic barriers created by outdiffusion of B and also on operating the HBT at high current densities are explained. High injection barriers can be suppressed by a special design of the Ge profiles. Introduction of C in the base suppresses outdiffusion of B. HBTs with SiGeC base layers are discussed. Issues involved in simultaneous optimization of f T , f max and BV CEO are addressed. Values of f T , f max and BV CEO of high-performance HBTs are compiled and given in a table. The noise characteristics of the SiGe HBTs are far superior to those of III-V devices. Noise in SiGe HBTs is discussed in detail. Finally, a summary of selected circuits that have been fabricated using SiGe HBTs is given.

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Section: Parasitic Barriers and Their Suppression By Cmentioning

confidence: 99%

“…Recent work has demonstrated that the performance of the HBTs with SiGeC base layers compares well with state-of-theart SiGe HBTs [65][66][67]. An additional advantage of the SiGeC base is that it allows a somewhat increased thermal budget and opens a wider processing window.…”

Section: Sigec Transistorsmentioning

confidence: 99%

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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“…The incorporation of germanium (Ge) and carbon (C) into silicon (Si) results in a large variety of silicon-based devices due to their ability to tailor properties, whether structural, electronic, optical, chemical, mechanical, etc. 1 Hetero-junction bipolar transistors, 2 strained channel complementary metal oxide semiconductor devices, 3 infra-red photo-detectors, raised sources and drains, 4 micro-electro-mechanical systems, and virtual substrates for III–V integration are a few examples which benefit from such tailoring. However, growing Si 1− y C y or Si 1− x − y Ge x C y alloys is very challenging, as it requires overcoming the thermodynamic equilibrium solid solubility of C in solid Si to 10 −4 at% at 1400 °C 5 and probably even lower in Ge.…”

Section: Introductionmentioning

confidence: 99%

Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy

et al. 2023

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“…We recently demonstrated a modular BiCMOS process with C-doped SiGe heterojunction bipolar transistors (SiGe:C HBTs) [1]. In this technology, the HBT integration adds only 4 mask steps to the CMOS process flow, because the transistors are fabricated as singlepolysilicon devices with epi-free collectors.…”

Section: Introductionmentioning

confidence: 99%

Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers

Knoll

Heinemann²,

Ehwald³

et al. 2000

30th European Solid-State Device Research Conference

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We demonstrate that single-polysilicon SiGe:C heterojunction bipolar transistors with a very thin, highly doped SiGe layer can be scaled in the emitter width to 0.4 µm and in the emitter overlap to 0.2 µm without any indications of B outdiffusion from the SiGe:C base. Thus, transistors can be fabricated with excellent low-power performance, reaching an f max of 40 GHz at a collector current of 10 µA. We report also a reduction in the I B -driven Early voltage for devices with small overlap due to a perimeter component of the base current, originating from the external base, or the base contact region.

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Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

Cited by 18 publications

References 2 publications

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy

Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers

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