Modified Positron Annihilation Model for Glassy-Like As₂Se₃

Abstract

An approach to structural characterization of chalcogenide glasses based on the study of void distribution is discussed. The results of positron annihilation lifetime spectra measurements for glassy-like g-As2Se3 are compared with nano-void distribution data obtained from Monte Carlo simulation. In this consideration perspectives to involve the parameters of nano-voids calculated from the first sharp diffraction peak in the framework of known Elliott's model are analyzed.

Defect configurations in Ge–S chalcogenide glasses studied by Raman scattering and positron annihilation technique

“…Open volume with larger size will have longer lifetime of trapped positrons because of the lower electron density [7,8]. Secondly, it is well known that the negatively charged CD generally exist in all of the known binary chalcogenide glasses system [15,16]. Furthermore, on the basis of numerous experimental data for the various chalcogenide glass systems, it was assumed that the main types of these CD were characterized by the following lifetimes -0.32 ns (s À 1 ) and 0.42 ns (Ge À 3 ) [16].…”