2003
DOI: 10.1016/s0169-4332(02)01365-x
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Modified Poole–Frenkel mechanisms in Ge25BixSb15−xS60 thin films

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Cited by 15 publications
(14 citation statements)
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“…34,35 The experimental value of barrier lowering coefficient ( β exp ) can be extracted from the slope m of graph of ln(G) against V 1/2 for the linear region at high applied voltage for all temperatures as shown in the inset of Fig. 3(b) and is given by…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…34,35 The experimental value of barrier lowering coefficient ( β exp ) can be extracted from the slope m of graph of ln(G) against V 1/2 for the linear region at high applied voltage for all temperatures as shown in the inset of Fig. 3(b) and is given by…”
Section: Resultsmentioning
confidence: 99%
“…As a result, electrons are thermally transported from the randomly distributed traps to the conduction band of the sample material. 25,31,32,35 At high voltage range, several electric and semiconducting materials conductance-voltage characteristic is of the following form. 22,31,34 …”
Section: Methodsmentioning
confidence: 99%
“…The reduction of dielectric dispersion and leakage current is crucial for enhancing the device performance and the stored electric charge [19]. The defect states in the film and the interface between electrode and the film are important to the leakage current and the dielectric dispersion of the films.…”
Section: Resultsmentioning
confidence: 99%
“…These dependencies of the activation energy on the electrical field and temperature, associated with a lowering of the barrier height, are governed by the image force effect, which are characteristic of Schottky conduction [20]. In the Poole-Frenkel effect, the free electrons are thermally emitted from the randomly distributed traps to the conduction band because the external electric field and temperature reduce the Columbic potential barrier [19]. However, the transport of carriers by Fowler-Nordheim (FN) tunneling yields leakage current density (J FN ) of the form [20],…”
Section: High-electric Fieldmentioning
confidence: 99%
“…The electrical conductivity of Ge-M-S (M = Bi or Sb) was the subject of many investigations [2][3][4][5][6][7]. Various mechanisms of conductivity in bulk and thin films of Ge x Sb 40−x Se 60 chalcogenides system have been suggested [3].…”
Section: Introductionmentioning
confidence: 99%