Modified Moore–Gibson–Thompson photo-thermoelastic model for a rotating semiconductor half-space subjected to a magnetic field

Abstract

This paper focuses on studying thermal, elastic and coupled plasma waves, in the sense of a photo-thermal process transport within an infinite semiconductor medium. In order to study photo-thermal interactions in two-dimensional semiconducting materials, a new mathematical model based on the Moore–Gibson–Thompson equation (MGTE) is implemented. The MGTE model involving the Green–Naghdi model of type III as well as the heat transport equation proposed by Lord and Shulman. We consider the semi-conductor half-space is rotated at a uniform angular speed and magnetized. The analysis of the distribution of thermophysical fields has been extracted by a normal mode method, represented graphically and discussed. The results predicted by the new and improved model have been compared with the generalized and classic ones. In addition, all field quantities have been examined for effects of rotation, a lifetime of the photo-generated, and the applied magnetic field.

Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model

“…In this section, a new photothermal model is compared to earlier models in order to verify them. Before we make the comparisons, we will first explain how to derive the previous models (CPTE, PLS, PGN-II, and PGN-III) from the modified MGTPT model given in Equation (11) in some cases.…”

“…The generalized photothermal model (PGN-III) without a relaxation parameter based on Green and Naghdi theory II may be developed when τ 0 = 0. It is possible to use the photothermal Green and Naghdi model (PGN-II) if we remove the term that contains the parameter K ij in the heat Equation (11). When the parameters K * ij , τ 0 > 0, the modified Moore-Gibson-Thompson photothermal model (MGTPT) is applied.…”

“…Abouelregal [9] investigated the responses in a solid, rotating semiconductor cylinder because of changing heat flow. Abouelregal et al [10][11][12] studied the impact of an additional carrier on a semiconducting spinning half-space exposed to a normal force using the Green and Naghdi models.…”

“…The introduction of the relaxation time into the thermal conductivity Equation (11) in the Green and Naghdi model of the third type (PGN-III) reduced the propagation speed of optical and mechanical thermal waves within the medium. This important conclusion demonstrates the importance of the proposed model, in which the problem of the physical inconsistency found in the CPTE and PGN-III models has been solved.…”

Thermo‐viscoelastic behavior in an infinitely thin orthotropic hollow cylinder with variable properties under the non‐Fourier MGT thermoelastic model

“…Green and Naghdi have suggested three hypotheses based on this reform, GN-I, GN-II (1) and GN-II, and GN-III (3). There have been recent attempts to modify conventional Fourier law by Abouelregal [7][8][9][10][11][12] by means of a time derivative of a higher order.…”