Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer

Reddy, Varra Niteesh; Gunasekhar, K. R.

doi:10.1007/s11664-018-6539-4

Journal of Elec Materi

2018

DOI: 10.1007/s11664-018-6539-4

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Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer

Varra Niteesh Reddy

K. R. Gunasekhar

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Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer

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References 40 publications

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