Modified indirect learning applied to neural network-based pre-distortion of a concurrent dual-band CMOS power amplifier

Schuartz, Luis; Freire, Luiza; Hara, Artur T.; Mariano, André; Leite, Bernardo; Lima, Eduardo G.

doi:10.1007/s10470-020-01741-7

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…However, in the middle band, only the efficiency decreases. These drawbacks can be observed in previous works [3][4][5][6][7][8][9][10][11][12][13][14][15][16] where the output power and power gain are not isolated in the middle band. Isolation within the middle band is crucial for efficiency and linearity.…”

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confidence: 88%

“…Multiband systems have gained popularity in recent years due to their compact size, low cost, and ease of implementation. Several dual-band PAs with different structures have been reported [3][4][5][6][7][8][9][10][11][12][13][14][15][16] . Challenges in dual-band PAs include efficiency, output power, gain, and cost, with the most significant challenge being the similarity of characteristics between the two bands.…”

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confidence: 99%

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Design of dual-band power amplifier using bandstop filter and dual-mode bias circuit for multistandard transceiver systems

Zarghami,

Hayati

2023

Sci Rep

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This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier. The proposed BSF provides isolation and efficiency, effectively separating the output power and power gain between the two operational bands. Additionally, a dual-mode bias circuit is designed to serve as an inductor choke and control the second harmonics for both operating frequencies simultaneously. Two dual-band PAs, utilizing LDMOS and GaN HEMT transistors, have been designed using the proposed output matching circuit, which incorporates the BSF, bias circuit, and compensation circuit. The results obtained from both PAs, employing different transistors, are identical. Based on the presented concepts, a dual-band PA with an LDMOS transistor has been fabricated and measured. The measurements reveal an efficiency of 79.23%, an output power of 39.85 dBm, and a power gain of 14.85 dB at a frequency of 0.7 GHz. Similarly, at a frequency of 1.9 GHz, the efficiency is 77.24%, the output power is 38.22 dBm, and the power gain is 13.22 dB.

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