Modified GaSe crystals for mid-IR applications

Singh, N. B.; Suhre, Dennis R.; Rosch, W.; Meyer, R.; Marable, M.; Fernelius, Nils C.; Hopkins, F. Kenneth; Zelmon, David E.; Narayanan, R.

doi:10.1016/s0022-0248(98)01214-7

Cited by 50 publications

(37 citation statements)

References 5 publications

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“…S and Te (anions) and In (cation), generating binary isostructural compounds GaS, GaTe, and InSe, respectively, may form solid solution crystals GaSe 12x S 19,25,26,[67][68][69] , where x is the mixing ratio of the parent binary compounds. The closer the match in the atomic size of the substituting atoms, the larger the mixing ratio of solid solution crystals that may be grown with suitable optical quality, as in the following: GaSe 12x S x with x f 0.44 (11 mass.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…The original e-polytype structure of GaSe is strengthened by doping; meanwhile, the physical properties responsible for the efficiency of frequency conversion and the possibility of electro-optic applications may be noticeably modified. However, due to the negative effect on optical nonlinearity of doping by sulfur, the first agent explored 24 , only a few other dopants (In, Te, Er, and Ag), in limited concentration ranges, were used until the last decade to modify further physical properties for nonlinear optical applications 19,21,25,26 . In addition, these studies are mostly related to the physical properties of the ordinary light waves.…”

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…It has been reported to be used in making a number of devices like MOSFET, IR detectors, solar cells, compound semiconductor hetrostructure, etc., in crystalline form while in amorphous form, it is a potential candidate for optical memory type applications [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Controlled synthesis and structural characterization of polycrystalline GaSe

2010

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A comprehensive study on the synthesis and characterization of gallium selenide (GaSe) has been reported in this paper. Synthesis of gallium selenide (GaSe) from component elements has been carried out in a specially designed and fabricated quartz ampoule, with the help of a rocking furnace. X-ray diffractometry study revealed crystalline GaSe samples belonging to hexagonal system. Raman spectral study emphasized three sharp lines at 208.89, 253.95, and 306.52 cm-I, in good agreement with X-ray diffraction results. Scanning electron microscopy revealed particles of rock like structure, sized in the range 0.4-6 /lm.

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“…4,5 In short, GaSe (and related doped and un-doped III-VI semiconductors such as GaTe) have emerged as valuable systems in the very active THz research field. [1][2][3]5,6,[8][9][10][11] Work on GaTe and doped GaTe crystals includes the growth and characterization of these systems for broadband tunable THz sources and sensors. 5 Doping with Te, 3,5 S, Cr, 2,6 Ag, 1 and Er 7 was found to strengthen GaSe.…”

Section: Introductionmentioning

confidence: 99%

“…2, 3,5,6,[8][9][10][11] First-principles theoretical studies investigating the mechanical and electrical properties Te-based systems were also conducted. 3 Unlike doping with In, the incorporation of a transition metal element raises intriguing possibilities for coupling the magnetic properties of the transition metal ion with the host III-VI semiconductor leading to optical or electrical transport effects.…”

Section: Introductionmentioning

confidence: 99%

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

et al. 2016

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Magnetic properties of single crystalline Ga1−xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1−xMnxSe and Ga1−xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1−xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1−xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1−xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1−xMnxS are observed in Ga1−xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.

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Modified GaSe crystals for mid-IR applications

Cited by 50 publications

References 5 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Controlled synthesis and structural characterization of polycrystalline GaSe

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

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