Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Reddy, M. Siva Pratap; Sreenu, K; Reddy, V. Rajagopal; Park, Chinho

doi:10.1007/s10854-016-6131-8

Cited by 33 publications

(19 citation statements)

References 51 publications

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“…The obtained these experimental values of the BH and the change with temperature are good agreement with reported in the literature (Altındal et al, 2008;Özdemir and Altındal 1994). This difference between B (C-V) and B (I-V) can be explained by the existence of surface states, barrier inhomogeneity, interfacial organic layer, and the nature pf measurement method (Bengi and Bülbül, 2013;Yakuphanoğlu and Senkal 2007;Chattopadhyay et al, 1998;Güllü et al 2008;Yerişkin et al 2017;Orak and Koçyiğit 2016;Karabulut 2018;Padma et al, 2017;Kınacı 2017;Rajagopal Reddy 2014;Taşcıoğlu, 2010;Pratap Reddy, 2017). The current across the BH and the current is sensitive to barrier distribution at the interface.…”

Section: Resultssupporting

confidence: 88%

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

Marıl¹

2019

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Au/PPy/n-Si (MPS) type SBDs were fabricated and their electrical characteristics were investigated in the temperature range of 140-340 K at 100 and 500 kHz frequencies by using analyzed the C-V measurements. The C-V plots have inversion, depletion and accumulation regions for each temperature. The value of C increases with increasing temperature almost as exponentially in inversion and depletion regions. The reverse bias C-2 vs V plots show a linear behavior in the wide range bias voltage and so the values of doping atoms (ND), Fermi energy (EF), diffusion potential (Vd), and barrier height (B(C-V)) were obtained from intercepts and slopes of these plots for each temperature and frequency. While the EF increases with increasing temperature, B decreases as linearly. The l values of B(C-V) range from 0.703 eV at 140 K to 0.161 eV at 340 K for 100 kHz and 0.810 eV at 140 K to 0.391 eV at 340 K for 500 kHz, respectively. The electrical conductivity (ac) increases as exponential with temperature. The activation energy (Ea) values were found as 30.8 meV from the slope Ln(ac)q/kT plot. These results implied that electrical characteristics of the SBDs are quite function of temperature at low frequencies and temperatures.

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Section: Resultssupporting

confidence: 88%

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

Marıl¹

2019

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…However, these disadvantages can be typically overcome by adding some metals (Ni, Co, Zn, Graphene) or metal oxides (MnO, NiO, ZnO) into them. [19][20][21][22] It is seen that the results obtained from the current or capacitance/conductance versus voltage executions generally deviate from their ideal cases owing to the adverse effects of N ss , R s , and interlayer. For example, in the applications, the C-V plot sometimes shows an apparent peak both in depletion and accumulation regions owing to N ss and R s , respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Despite that, unfortunately, polymers have some inabilities, such as dielectric permittivity and poor mobility. However, these disadvantages can be typically overcome by adding some metals (Ni, Co, Zn, Graphene) or metal oxides (MnO, NiO, ZnO) into them 19–22 …”

Section: Introductionmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

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Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

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“…The organic solids have been employed widely because of durability and barrier modification effects in the metal/interfacial film/semiconductor (MIS) junctions [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. For example, the basic diode parameters of metal/semiconductor (MS) junctions could be adjusted by organic interlayer.…”

Section: Introductionmentioning

confidence: 99%

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

Asubay¹,

Ava²,

Güllü³

2022

JOR

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Malachite Green (MG) organic dye thin film was prepared by simple drop casting method. Microstructural property of MG layer was investigated by Scanning Electron Microscopy (SEM). SEM image indicated that MG organic thin layer was formed from nanoclusters. Later, it was fabricated Ag/Malachite Green(MG)/p-InP diodes by drop cast method. The barrier height (BH) and ideality factor by using I-V characteristics for the device were found as 0.75 eV and 1.68. By using the Norde method, the BH and the resistance of neutral region of the device were extracted as 0.80 eV and 1.17x104 Ω. The interfacial states concentration of the device has been seen to decrease from 2.79×1013 eV-1 cm-2 to 5.80×1012 eV-1 cm-2 . By using capacitance-voltage technique, the values of the built-in voltage, BH and semiconductor doping density were found as 1.22 V, 0.83 eV and 1.87x1017 cm-3 for the Ag/MG/p-InP diode, respectively.

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Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Cited by 33 publications

References 51 publications

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

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Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer

Cited by 33 publications

References 51 publications

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

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The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes