Modified chemical deposition and physico-chemical properties of copper sulphide (Cu2S) thin films

Pathan, Habib M.; Desai, J. D.; Lokhande, C.D.

doi:10.1016/s0169-4332(02)00843-7

Cited by 164 publications

(79 citation statements)

References 9 publications

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“…The sheet resistance of Cu x S thin film was found to be 10 −2 Ω cm by d.c. 2-point probe method at room temperature, which is agreement with the values reported previously [18,19]. Since the film was of low electrical resistance, sheet resistance was also directly measured using a digital multimeter.…”

Section: Resultssupporting

confidence: 89%

“…Generally, the resistivity of Cu x S films varies depending on the stoichiometry and fabrication method and p-type conductivity is attributed to free holes from acceptor levels of copper vacancies [11]. Cu x S thin films have been prepared by several techniques such as atomic layer deposition [7], vacuum evaporation [12], RF reactive sputtering [13], chemical bath deposition [3,14], spray pyrolysis [15,16], and successive ionic layer * Correspondence: a astam@yahoo.com adsorption and reaction (SILAR) [17][18][19][20]. The stoichiometry of Cu x S films often depends on the fabrication method used.…”

Section: Introductionmentioning

confidence: 99%

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An investigation on SILAR deposited Cu$_{x}$S thin films

Astam¹,

Akaltun²,

Yıldırım³

2014

Turk J Phys

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Abstract:A copper sulfide thin film was deposited on glass substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric sulfate and sodium sulfide aqueous solutions as precursors. The structural, surface morphological, optical, and electrical properties of the as-deposited film were investigated via X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, and d.c. 2-point probe methods. The film was found to be amorphous, dense, and uniform. Average atomic percentage of Cu:S in the as-deposited film was calculated as 63:37. The band gap energy of copper sulfide thin film was found to be 2.14 eV and the resistivity was 10−2 Ω cm at room temperature. The effect of annealing on crystal structure was also studied and reported. X-ray diffraction patterns revealed that annealing the film at various temperatures slightly improved the crystallinity. By using thermoelectric power measurement, p-type electrical conductivity was determined for as-deposited and annealed samples.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

An investigation on SILAR deposited Cu$_{x}$S thin films

Astam¹,

Akaltun²,

Yıldırım³

2014

Turk J Phys

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“…At x = 0.09, the absorption is still quite low. But as we ramp the Cu content (x > 0.35), absorption from Cu y S phases, which have smaller band gaps (0.6 -2.35 eV, depending on crystal structure), [52] begins to dominate and significantly decrease transmittance. Additionally, band tailing might be present at low Cu concentrations.…”

Section: Optical Propertiesmentioning

confidence: 99%

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Woods‐Robinson

Cooper

et al. 2016

Adv Elect Materials

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All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. In addition, many relatively high- A decrease in lattice parameter with Cu content suggests the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous Cu y S, which dominates at higher Cu concentrations. The combination of high hole conductivity and optical transparency for the peak conductivity Cu x Zn 1-x S films is among the best reported to date for a room temperature deposited p-type TCM.

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“…• C. It is reported that Cu x S, Sn x S, and Zn x S have direct bandgap of 2.35 eV, 29 2.0 eV, 30 and 2.99 to 3.80 eV, 31 respectively, all of which are larger than that of CZTS. The insert in Fig.…”

Section: Resultsmentioning

confidence: 99%

Cu<sub>2</sub>ZnSnS<sub>4</sub> polycrystalline thin films with large densely packed grains prepared by sol-gel method

Jiang

Dhakal

et al. 2011

J. Photon. Energy

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Abstract. Cu 2 ZnSnS 4 (CZTS) was obtained from a sol-gel precursor which consists of copper chloride, zinc chloride, tin chloride, and thiourea. CZTS thin films were prepared by spincoating the sol-gel precursor followed by annealing in a nitrogen atmosphere. The morphology, composition, and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, and Raman scattering. The optical measurement shows the bandgap of these films is ∼1.51 eV, and the optical absorption coefficient is on the order of 10 4 cm −1 . CZTS solar cells with a structure of low-alkali glass/Mo/CZTS/CdS/iZnO/ZnO:Al/Al grid were tentatively fabricated. The best solar cell showed a short-circuit current density of 5.06 mA/cm2 , an open-circuit voltage of 358 mV, a fill factor of 34.66%, and an efficiency of 0.63% under AM1.5 (100 mW/cm 2 ) illumination. These results demonstrate the CZTS thin films were successfully deposited by a cheap sol-gel technique. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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Modified chemical deposition and physico-chemical properties of copper sulphide (Cu2S) thin films

Cited by 164 publications

References 9 publications

An investigation on SILAR deposited Cu$_{x}$S thin films

An investigation on SILAR deposited Cu$_{x}$S thin films

P‐Type Transparent Cu‐Alloyed ZnS Deposited at Room Temperature

Cu<sub>2</sub>ZnSnS<sub>4</sub> polycrystalline thin films with large densely packed grains prepared by sol-gel method

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