Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system

Larson, J.D.; Bradley, P.; Wartenberg, S.A.; Ruby, R.

doi:10.1109/ultsym.2000.922679

Cited by 388 publications

(161 citation statements)

References 5 publications

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“…The MBVD includes the dielectric loss (Ro) of the piezoelectric material and electrical losses (Rs) of the electrodes [14]. This model provides a better method, both simple and accurate, for characterizing electrical behavior of the FBAR at fundamental modes and higher harmonics and designing bandpass filters [11][12][13][14]. Several methods can be found in the literature to calculate the Q factor, for example, calculations based on the BVD) model or evaluation from the phase angle (imaginary part) of the electrical impedance given as:…”

Section: Bvd Modelmentioning

confidence: 99%

The influence of design parameters on the performance of FBAR in 10–14 GHz

et al. 2017

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Abstract. This research presents the analysis of the influence of design parameters on the performance of film bilk acoustic wave resonator (FBAR) working from 10 GHz to 14 GHz. The analysis is done by implementing one-dimensional (1-D) modellings, which are 1-D Mason model and Butterworth Van Dyke (BVD) model. The physical parameters such as piezoelectric materials and its thickness, and size of area affecting the characteristics of the FBAR are analyzed in detail. Zinc oxide (ZnO) and aluminum nitride (AlN) are chosen as the piezoelectric materials. The resonance area is varied at 25µm×25µm to 35µm×35µm. From the analysis, it is found that as the frequency increases, the thickness of the piezoelectric material decreases. Meanwhile, the static capacitance increases as the frequency increases. It is also found that as the area increases, the electrical impedance and static capacitance also increases.

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Section: Bvd Modelmentioning

confidence: 99%

The influence of design parameters on the performance of FBAR in 10–14 GHz

et al. 2017

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“…To solve the problem, this letter presents two methods employed to design a 1.9 GHz cross-coupled FBAR-VCO. Figure 1 shows the equivalent circuit of the Modified Butterworth Van Dyke (MBVD) model [5] of FBAR, where R s , R 0 , R m , C 0 , C m and L m are the electrical parameters of FBAR, P 1 and P 2 are two ports of FBAR, C s is the total capacitance of outside circuit and C pad is the parasitic capacitance Fig. 2.…”

Section: Fig 1 Mbvd Model Of Fbarmentioning

confidence: 99%

The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

Zhang

Kochhar

Yoshida

et al. 2013

IEICE Electron. Express

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Abstract:In this letter, we propose the methods to mitigate low frequency instability in a film bulk acoustic resonator (FBAR) based cross-coupled voltage-controlled oscillator (FBAR-VCO). The first method employs a capacitor and while the other one employs a series inductor-capacitor. Using the post-layout simulation, a comparative study of the performances such as phase noise and figure of merit (FOM) of the designed FBAR-VCO is carried out. It is found that both the methods inhibit the low frequency instability successfully and the additional advantage of the second method is 2 dB improvement of FOM. Compared to other published FBAR-VCOs, this work has very low phase noise, below −150 dBc/Hz at 1 MHz offset frequency, and much better FOM below −210 dB.

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“…Figure 1 (a) shows the equivalent circuit of the Modified Butterworth Van Dyke (MBVD) model [5] of FBAR, where R s , R 0 , R m , C 0 , C m and L m are the electrical parameters of FBAR. FBAR resonators have two resonance frequencies, series resonance frequency (f s ) and parallel resonance frequency (f p ) as shown in Fig.…”

Section: Reviews On Fbar Resonatormentioning

confidence: 99%

A low phase noise FBAR based multiband VCO design

Zhang

Kochhar

Yoshida

et al. 2013

IEICE Electron. Express

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In this letter, design methodlogy of a low phase noise multiband film bulk acoustic resonator (FBAR) based voltage controlled oscillator (FBAR-VCO) is presented. It employs a 1.9 GHz cross-coupled FBAR-VCO core, and extends oscillation to 0.65 GHz, 0.98 GHz, 1.96 GHz and 3.92 GHz by a divider and a multiplier. By analyzing the low frequency instability and proposing the solution based on a capacitor, cross-coupled architecture is employed in 1.9 GHz FBAR-VCO core and phase noise degradation is extensively studied for extended frequencies. By considering the effect of transistors' size on the Q-factor and impedance of FBAR, excellent phase noise and high loop gain are obtained. The post-layout simulation shows the proposed multiband FBAR-VCO achieves the lowest phase noise below À150 dBc/Hz at 1 MHz offset frequency.

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Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system

Cited by 388 publications

References 5 publications

The influence of design parameters on the performance of FBAR in 10–14 GHz

The influence of design parameters on the performance of FBAR in 10–14 GHz

The methods of maintaining Low frequency stability in FBAR based cross-coupled VCO design

A low phase noise FBAR based multiband VCO design

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