Modification on graphite due to helium ion irradiation

Dutta, Nirupam; Mohanty, S. R.; Buzarbaruah, N.

doi:10.1016/j.physleta.2016.05.044

Cited by 12 publications

(7 citation statements)

References 32 publications

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“…This process of defect generation in graphene is referred to as indirect defects [6]. It was reported previously that sputtered C atoms undergo agglomeration into small clusters due to their high structural fluidity during the process of ion irradiation [31,32]. Direct and indirect defects cause agglomeration of sputtered atoms which presumably resulted in the formation of nanostructures that are observed in this study on ion-implanted EG/SiC in Figure 1c,d.…”

Section: Afmsupporting

confidence: 53%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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Section: Afmsupporting

confidence: 53%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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“…The small increase in interlayer spacing is due to the displacement of carbon atoms to interstitial positions and/or the inclusion of nitrogen atoms in interlayer positions. [ 72 ] During oxidation and N‐doping of graphite, as a cotreatment, the C/O ratio as well as the nitrogen content as a function of the new functional groups formed increased. However, the different diffraction patterns shown in SAED are possibly due to an incomplete oxidation of graphite during both treatments, the overlapping of carbon‐based material planes modified by a different C:N conformation and/or a reorientation depending on the functional groups, modifying the effects of electrostatic and steric repulsion.…”

Section: Resultsmentioning

confidence: 99%

Nitrogen Doping of Graphite Oxide with 2,3‐Diaminomaleonitrile: A Study of the Structural, Morphological, and Electrochemical Behavior

Chávez-Esquivel

Cervantes‐Cuevas

Gasca

et al. 2022

Physica Status Solidi (b)

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“…In other studies, which were performed using He ion implantation at high (up to MeV) acceleration voltages, changes in the d-spacing of graphite was reported by electron microscopy studies [82,106]. From these it was seen that the generation of defects, which can be vacancies or interstitials, not only occurs but the global structure of these defects is energy dependent [28].…”

Section: -Introductionmentioning

confidence: 90%

“…From these it was seen that the generation of defects, which can be vacancies or interstitials, not only occurs but the global structure of these defects is energy dependent [28]. It was also shown that helium irradiation led to microstructures on the surface such as bubbles indicating ion atomic clustering and damage which is not uniform [82]. This damage from high energy implantation indicates that carbon is sputtered to form the blistered topology reported.…”

Section: -Introductionmentioning

confidence: 98%

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Exploring defects and induced magnetism in epitaxial graphene films

Mazza¹

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Graphene has been demonstrated to have unique properties not only in its virgin state but also by altering its environment through rotations in bilayer graphene, doping, and creating heterostructures with other 2D materials, which all lead to different functional behaviors. Another avenue to altering graphene is by using defects to generate p-orbital magnetism, which is of interest both to fundamental physics and potential application in new classes of spintronic devices. Indeed, atomic hydrogen creating sp3 defects attached to the graphene surface as well as vacancies in graphene have been shown to induce magnetism, while high energy (MeV) proton irradiation has been shown to produce ferromagnetism at room-temperature in graphite. However, detailed investigations of these systems are absent so that little is known about the density and configuration of defects, the role of interfaces, or how these relate to magnetism. In this thesis studies of single-layer graphene revealed that atomic deuteration indeed does lead to reversible chemisorption. However, it is found that atomic deuterium treatment of many-layer epitaxially grown graphene on C-face 4H-SiC (EG/SiC) only affects the surface graphene layer and the buried graphene/SiC interface. While this result did not present magnetism from the interface or graphene, x-ray reflectivity and cross-sectional transmission electron microscopy demonstrated a change of the buried graphene/SiC interface which resembles a delamination of graphene from the substrate. In some cases, multiple atomic treatments lead to complete delamination of the graphene film. Motivated by the results of atomic hydrogenation (deuteration), interlayer incorporation of hydrogen was achieved by accelerating ions to implant them between graphene sheets using low (100s of eV) energy hydrogen ion implantation. We focus on addressing the role of the damage from implantation in the magnetism which we observe in our samples. The use of polarized neutron reflectivity and x-ray scattering aims to uniquely address the relationship of strain, structural damage or chemisorption, and magnetism in many layer epitaxial graphene. We find that via tailoring the ion distribution (and range) to the sample we can reliably predict the structural and magnetic changes driven by implantation.

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Modification on graphite due to helium ion irradiation

Cited by 12 publications

References 32 publications

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Nitrogen Doping of Graphite Oxide with 2,3‐Diaminomaleonitrile: A Study of the Structural, Morphological, and Electrochemical Behavior

Exploring defects and induced magnetism in epitaxial graphene films

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