Modification of ZnO films under high energy Xe-ion irradiations

Zang, Hang; Wang, Z.G.; Peng, Xingping; Yin, Shi; Liu, C.B.; Wei, Kongfang; Zhang, C.H.; Chen, Yao; Ma, Yulong; Zhou, Lin; Sheng, Yuchen; Gou, Jun

doi:10.1016/j.nimb.2008.03.131

Cited by 15 publications

(10 citation statements)

References 13 publications

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“…We found no change in the position and intensity of the (0 0 2) peak. This indicates that SHI irradiation does not change the basic hexagonal wurtzite structure of ZnO [29]. Other peaks of (1 0 0) and (1 0 1) planes show a significant decrease in their intensity hence modified the polycrystalline structure of thin films into the preferred (0 0 2) C-axis orientation.…”

Section: Resultsmentioning

confidence: 90%

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Kumar

Singh

2009

Applied Surface Science

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Section: Resultsmentioning

confidence: 90%

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Kumar

Singh

2009

Applied Surface Science

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“…Energetic ion beam treatment as a post-deposition processing technique is powerful to significantly modify the properties of the deposited thin films [1][2][3]. ZnO nearly always exhibits intrinsic n-type conductivity which is normally attributed to native defects [4].…”

Section: Introductionmentioning

confidence: 99%

Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films

Zang

Wei

Sun

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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“…If the size of the defect clusters (isolated) is not very large but they are closely spaced then both FWHM as well as peak intensity may reduce 38 as is seen in this study. In case of such defect clusters placed in a relatively higher distance, peak FWHM may decrease with increase of coherent scattering leading to higher peak intensity 43 24 . We have also plotted the ratio (R) of peak intensities of (002) and (101) peak ( Fig.…”

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confidence: 99%

Interplay of defects in 1.2 MeV Ar irradiated ZnO

Chattopadhyay

Dutta

Jana

et al. 2010

Journal of Applied Physics

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Defect characterization in 1.2 MeV Ar8+ irradiated polycrystalline ZnO has been carried out by x-ray diffraction (XRD), scanning electron microscopy (SEM) along with electrical resistivity, and photoluminescence (PL) measurements at room temperature (RT). Interestingly, irradiation with the initial fluence (1×1015 ions/cm2) changes the color of the sample from white to orange while the highest irradiation fluence (5×1016 ions/cm2) makes it dark reddish brown that appears as black. XRD study reveals no significant change in the average grain size of the samples with irradiation fluence. Increase in surface roughness due to sputtering is clearly visible in SEM with highest fluence of irradiation. RT PL spectrum of the unirradiated sample shows intense ultraviolet (UV) emission (∼3.27 eV) and less prominent defect level emissions (2–3 eV). The overall emission is largely quenched due to initial irradiation fluence. Increasing the fluence of Ar beam further, UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This is due to an increase in donor concentration as well as their mobility induced by high fluence of irradiation. Change in color in the irradiated samples indicates dominant presence of oxygen vacancies. It is now well known that oxygen vacancies are deep donors in ZnO. So oxygen vacancies, in principle, are not the source of conductivity in ZnO at RT. Simultaneous evolution of coloration and conductivity in ZnO, as is seen in this study, indicate that oxygen vacancies strongly influence the stability of shallow donors, presumably zinc interstitial related (highly mobile Zn interstitials also need to form defect pair/complex to be stable), which act as major source of carriers. Such a contention is in conformity with most recent theoretical calculations.

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Modification of ZnO films under high energy Xe-ion irradiations

Cited by 15 publications

References 13 publications

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films

Interplay of defects in 1.2 MeV Ar irradiated ZnO

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