Modification of thin oxide films of MOS structure by high-field injection and irradiation

Andreev, D. V.; Бондаренко, Г. Г.; Андреев, В. В.; Stolyarov, A. A.

doi:10.1088/1757-899x/110/1/012041

Cited by 6 publications

(8 citation statements)

References 15 publications

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“…Positively charged ions in the phosphorus doped SiO 2 capture accumulated electrons from the surface of the semiconductor [28]. When a high electric field was applied to the gate, electrons were injected into the dielectric, resulting in a negatively charged oxide, so a shift in flatband voltage was observed [24]. At high temperature and under a high electric field, the mobile charge in the oxide will move to the interface, or away from the interface depending on the polarity of applied bias.…”

Section: Discussionmentioning

confidence: 99%

“…In Si technology, a very thin PSG film has been used between the metal gate and SiO 2 layer to reduce the effect of mobile charge (Na + ion getter), stabilising the device characteristics. The improvement in charge stability and breakdown voltage of phosphorus doped SiO 2 /Si MOS devices can be realised by a modification technique reported by Andreev, et al [24]. Using this technique, the characteristics of Si MOS devices are modified by electron injection at high electric field.…”

Section: Introductionmentioning

confidence: 99%

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Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection

Idris

Weng

Peters

et al. 2019

J. Phys. D: Appl. Phys.

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The effect of phosphorus inclusion on different bias stress at high electric field on phosphorus doped SiO 2 is investigated by electrical measurements of SiC MOS capacitors. 1 MHz C − V measurements with (1) different bias hold time (up to 999 s at room and high temperature of 250 • C), (2) different applied gate voltage (± 10, 20 and 30 V without stress time) and (3) different bias hold time at high voltage (± 30 V) were taken to observe the evolution of flatband voltage, effective oxide charge density and interface state density. In this investigation, the characteristics were measured in both sweep directions and compared to those obtained from undoped SiO 2 samples. At 250 • C, the flatband voltage of phosphorus-doped SiO 2 samples shows a significant shift to the positive with increasing bias hold time. Similar trends are observed with the characteristics obtained at room temperature, but the shifts are less significant. Both undoped and phosphorus-doped samples show positive flatband shift when a higher bias was applied for longer hold times, but the latter demonstrated more significant changes. We conclude that the phosphorus ions increase the instability of the electrical characteristics related to the generation of mobile charges in the SiO 2 , resulting in the injection of electrons from the semiconductor to the oxide. Therefore, the accumulated negative charge in phosphorus-doped SiO 2 resulting from the injection of electrons, which is enhanced by the mobile charge, is responsible for the enhanced positive shift in C − V and I − V characteristics.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection

Idris

Weng

Peters

et al. 2019

J. Phys. D: Appl. Phys.

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“…Figure 3 shows the histograms of MIS structures distribution by charge injected into the dielectric until breakdown when the current stress [1,5] for the samples with the SiO 2 gate dielectric (1) and those with the SiO 2 -PSG gate dielectric (2,3). Figure 3 shows that the usage of the SiO 2 -PSG two-layer gate dielectric allows to rise the average amount of charge injected into the dielectric until breakdown and to diminish a number of defective structures with low charge-to-breakdown.…”

Section: Resultsmentioning

confidence: 99%

“…In order to make the injection modification of MIS structures, high-field tunnel injection of electrons from the substrate [1][2][3][4] was applied in the mode of flowing of constant injection current with the density of 0.1 µA/cm 2 to 10 mA/cm 2 . During the injection, monitoring of voltage dropped on the MIS structure was applied.…”

Section: Experimental Samples and Methods Of Experimentsmentioning

confidence: 99%

“…This parameter determines characteristics and reliability of MIS structures. An important problem of modern micro-and nanoelectronics is developing of technologies and methods to correct parameters of MIS structures not only during their production, but also during their operation [1][2][3][4]. In order to accomplish this, it is necessary to develop new nanosized dielectric films and structures based on them, whose features allow to modify their charge state in a wide range of values and keep that modified charge state for a long time.…”

Section: Introductionmentioning

confidence: 99%

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Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

et al. 2017

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Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.

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Electrochemical machining of additively manufactured γ-TiAl parts: post-processing technique to reduce surface roughness

Demirtas

Cebi

Aslan

et al. 2023

Int J Adv Manuf Technol

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Modification of thin oxide films of MOS structure by high-field injection and irradiation

Cited by 6 publications

References 15 publications

Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection

Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection

Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

Electrochemical machining of additively manufactured γ-TiAl parts: post-processing technique to reduce surface roughness

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Modification of thin oxide films of MOS structure by high-field injection and irradiation

Cited by 6 publications

References 15 publications

Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection

Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection

Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

Electrochemical machining of additively manufactured γ-TiAl parts: post-processing technique to reduce surface roughness

Contact Info

Product

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Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection

Positive flatband voltage shift in phosphorus doped SiO₂/N-type 4H-SiC MOS capacitors under high field electron injection