Modification of polymer gate dielectrics for organic thin-film transistor from inkjet printing

Zhang, Guocheng; Zhang, Pingjun; Chen, Huipeng; Guo, Tao

doi:10.1007/s00339-018-1899-4

Cited by 9 publications

(9 citation statements)

References 56 publications

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“…To stop the flow, the polarity of the voltage is reversed, expanding the nozzle. This inkjet printing deposition method is suitable for complex morphologies and arrays of materials [ 140 , 141 , 142 , 143 , 144 , 145 ]. Figure 20 shows an illustration of the inkjet printing method.…”

Section: Inkjet Printing Methodsmentioning

confidence: 99%

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

et al. 2022

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Pentacene is a well-known conjugated organic molecule with high mobility and a sensitive photo response. It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors, and smart sensors. With the development of flexible and wearable electronics, the deposition of good-quality pentacene films in large-scale organic electronics at the industrial level has drawn more research attention. Several methods are used to deposit pentacene thin films. The thermal evaporation technique is the most frequently used method for depositing thin films, as it has low contamination rates and a well-controlled deposition rate. Solution-processable methods such as spin coating, dip coating, and inkjet printing have also been widely studied because they enable large-scale deposition and low-cost fabrication of devices. This review summarizes the deposition principles and control parameters of each deposition method for pentacene and its derivatives. Each method is discussed in terms of experimentation and theory. Based on film quality and device performance, the review also provides a comparison of each method to provide recommendations for specific device applications.

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Section: Inkjet Printing Methodsmentioning

confidence: 99%

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

et al. 2022

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“…This dielectric features a smooth surface (RMS roughness of approx. 0.2 nm), low leakage current density, and a high breakdown electric field (> 10 MV/cm) [23,24]. In addition, silicon oxide is chemically resistant, withstanding photolithography of electrodes and semiconductor deposition.…”

Section: Introductionmentioning

confidence: 99%

“…That comes in spite of a common gate electrode for all transistors. Incompatible with large-area flexible substrates, SiO2 requires bulky and expensive equipment to be grown at temperatures (T) over 1,000°C [24]. Furthermore, a self-assembled monolayer (SAM) is needed in order to decrease charge carrier trapping at the semiconductor/dielectric interface and, consequently, enhance the effective mobility [25].…”

Section: Introductionmentioning

confidence: 99%

“…HfO2 and SiO2). However, organic dielectric materials usually deposited at T < 200°C offer higher compatibility with large-area flexible substrates, as well as a better interface with organic semiconductors [24]. Despite all that, some challenges still need to be overcome in order to incorporate organic dielectrics into OTFTs, such as resisting electrodes and semiconductor processing, while providing interfaces with reduced charge trapping [26,27].…”

Section: Introductionmentioning

confidence: 99%

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Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

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“…This dielectric features a smooth surface (RMS roughness of ca. 0.2 nm), low leakage current (~10 nA/cm 2 at 0.2 MV/cm), and a breakdown electric field higher than 10 MV/cm [2,3]. In addition, it can withstand photolithography of source and drain electrodes, as well as semiconductor deposition.…”

Section: Introductionmentioning

confidence: 99%

Organic Dielectric Films for Flexible Transistors as Gas Sensors

García

Izquierdo

Nogueira

et al. 2020

JICS

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Cross-linked polymer films with poly(melamine-co-formaldehyde) methylated (PMF) were investigated in order to integrate flexible organic transistor-based sensors. By blending poly(methyl methacrylate) (PMMA) with PMF, solutions showed reduced viscosity for wet processing. Thin-films from poly (4-vinylphenol) (PVP) blends with PMF featured lower RMS roughness (0.37 nm) and higher dielectric constant (k ~ 3.7 – 5.7). The presence of enhanced cross-linking at higher PMF concentrations was confirmed for both polymers from chemical resistance essays and structural characterization.

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Modification of polymer gate dielectrics for organic thin-film transistor from inkjet printing

Cited by 9 publications

References 56 publications

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Organic Dielectric Films for Flexible Transistors as Gas Sensors

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