1982
DOI: 10.1049/el:19820182
|View full text |Cite
|
Sign up to set email alerts
|

Modification of ICCG method for application to semiconductor device simulators

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

1983
1983
1995
1995

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 15 publications
(2 citation statements)
references
References 1 publication
0
2
0
Order By: Relevance
“…where V is the electrical potential, q is the absolute electron charge, is the semiconductor permittivity, and No is the doping concentration, Eqs. (37)(38)(39)(40) are used in our numerical simulations.…”
Section: )mentioning
confidence: 99%
See 1 more Smart Citation
“…where V is the electrical potential, q is the absolute electron charge, is the semiconductor permittivity, and No is the doping concentration, Eqs. (37)(38)(39)(40) are used in our numerical simulations.…”
Section: )mentioning
confidence: 99%
“…Dirichlet boundary conditions are applied to the contacts and Neumann boundary conditions are used where the perpendicular current flow is zero. An incomplete Cholesky conjugate gradient method [38][39][40] is used to solve Poisson's equation. Gauss-Seidel iteration is applied to the quantum moment equations.…”
Section: Numerical Implementationmentioning
confidence: 99%