Modification of ICCG method for application to semiconductor device simulators

Wada, Takashi; Dang, Ryo

doi:10.1049/el:19820182

Cited by 15 publications

(2 citation statements)

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“…where V is the electrical potential, q is the absolute electron charge, is the semiconductor permittivity, and No is the doping concentration, Eqs. (37)(38)(39)(40) are used in our numerical simulations.…”

Section: )mentioning

confidence: 99%

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2‐D Simulation of Quantum Effects in SmallSemiconductor Devices Using QuantumHydrodynamic Equations

Zhou

Ferry

1995

VLSI Design

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We discuss the basis of a set of quantum hydrodynamic equations and the use of this set of equations in the two-dimensional simulation of quantum effects in deep submicron semiconductor devices. The equations are obtained from the Wigner function equation-of-motion. Explicit quantum correction is built into these equations by using the quantum mechanical expression of the moments of the Wigner function, and its physical implication is clearly explained. These equations are then applied to numerical simulation of various small semiconductor devices, which demonstrate expected quantum effects, such as barrier penetration and repulsion. These effects modify the electron density distribution and current density distribution, and consequently cause a change of the total current flow by 10-15 per cent for the simulated HEMT devices. Our work suggests that the inclusion of quantum effects into the simulation of deep submicron and ultra-submicron semiconductor devices is necessary.

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Section: )mentioning

confidence: 99%

“…Dirichlet boundary conditions are applied to the contacts and Neumann boundary conditions are used where the perpendicular current flow is zero. An incomplete Cholesky conjugate gradient method [38][39][40] is used to solve Poisson's equation. Gauss-Seidel iteration is applied to the quantum moment equations.…”

Section: Numerical Implementationmentioning

confidence: 99%