Modification of GaSb(100) surfaces induced by annealing under vacuum and under Sb4 and As4 flux

Nouaoura, M.; Silva, F.W.O. Da; Bertru, Nicolas; Rouanet, M.; Tahraoui, A.; Oueini, W.; Bonnet, J.; Lassabatere, L.

doi:10.1016/s0022-0248(96)00741-5

Cited by 9 publications

(8 citation statements)

References 16 publications

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“…A similar enhancement in optical properties has also been reported in NWs of other material systems namely, CoNi [20], SnO 2 [21], CdTe [22], CdSe [23]; however, these were subjected to ex situ annealing. There have been no such reports on Sbbased NWs, though there is limited work on thin films of GaAsSb [24,25] and GaSb [26], where ex situ annealing is found to improve homogeneity and migration of constituent atoms from the bulk to the surface leading to improved surface order with increased photoluminescence (PL) emission. Using this simple annealing procedure and conventional fabrication processes, a Schottky barrier photodetector of p-i axial configured vertical GaAsSb NW ensemble with a AlGaAs passivated shell with good responsivity and detectivity is demonstrated on a p-type Si (111) substrate.…”

Section: Introductionmentioning

confidence: 99%

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

et al. 2018

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In this work, we report on the p-i GaAsSb/AlGaAs nanowires (NWs) ensemble device exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 A W, an external quantum efficiency of 6.1 × 10%, and a detectivity of 1.9 × 10 Jones at 633 nm. The high responsivity of the NWs has been attributed to in situ post-growth annealing of GaAsSb axial NWs in the ultra-high vacuum. The enabling growth technology is molecular beam epitaxy for the Ga-assisted epitaxial growth of these NWs on Si (111) substrates. Room temperature Raman spectra, as well as temperature dependent micro-photoluminescence peak analysis indicated suppression of band tail states and non-radiative channels due to annealing. A similar improvement in in situ annealed p-i GaAsSb NW ensemble with an AlGaAs passivating shell was inferred from a reduction in the Schottky barrier height as well as the NW resistance compared to the as-grown NW ensemble. These results demonstrate in situ annealing of nanowires to be an effective pathway for improving the optoelectronic properties of the NWs and the device thereof.

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Section: Introductionmentioning

confidence: 99%

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

et al. 2018

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“…A possible explanation is supposed to be that the formation of GaAsSb micro-phase is caused by exchange between As and Sb during the growing of InAsSb at higher temperatures. [13] The GaAsSb may be mainly responsible for the defects such as small hillocks. The low temperature InAs buffer layer could preclude the exchange between As and Sb, so that mirror-like surface can be achieved.…”

Section: Surface Morphologymentioning

confidence: 99%

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Yan

Wang

et al. 2009

Chinese Phys. B

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Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 1016 cm−3.

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“…Annealing at ∼400 • C is accompanied by the desorption of Sb, which leads to a noticeable change in the surface stoichiometry. An increase in temperature above 500 • C is accompanied by antimony evaporation with gallium droplets appearing [20]. Since the GaSb homoepitaxy temperature is usually 450-550 • C, the deposition is carried out with antimony supersaturation (i.e.…”

Section: Introductionmentioning

confidence: 99%

Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation

Goroshko¹,

Chusovitin²,

Subbotin³

et al. 2020

Semicond. Sci. Technol.

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The temperature stability of high-density GaSb quantum dots grown on a Si(111) surface using solid-phase epitaxy is investigated during annealing at 450 °C. It is found that the bare silicon surface plays a critical role in the GaSb decomposition through the destruction of Sb–Ga bonds with the simultaneous formation of Sb–Si bonds. GaSb decomposition can be significantly suppressed if saturated monolayer coverage in the form of the Si(111)-(√3 × √3)-R30°-Sb surface reconstruction is preliminarily formed. This allows GaSb quantum dots to be embedded in the silicon matrix using molecular beam epitaxy at high temperature.

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Modification of GaSb(100) surfaces induced by annealing under vacuum and under Sb4 and As4 flux

Cited by 9 publications

References 16 publications

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation

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