Modification of EEHEMT1 Model for Accurate Description of GaN HEMT Output Characteristics

Lautensack, Christian; Chalermwisutkul, Suramate; Jansen, R.H.

doi:10.1109/apmc.2007.4554633

Cited by 9 publications

(10 citation statements)

References 3 publications

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“…Compared to the lumped EEHEMT1 model included in ADS, SDD models allow modification of the model equations if necessary. However, such modifications have only been made if they lead to a significant improvement of the model quality as in case of the optimized description of the knee region of HFETs presented earlier [12]. Basis of the extraction of the model parameters are pulsed S-parameter measurements with f = 1−20 GHz and the quiescent voltages V GSQ = V DSQ = 0V .…”

Section: A Basic Mishfet-modelmentioning

confidence: 99%

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

Cumana

Lautensack

Eickelkamp

et al. 2008

2008 European Microwave Integrated Circuit Conference

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GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device will behave under realistic operating conditions.In this paper, an improved EEHEMT1-based model for GaN MISHFETs, will be introduced. This model is capable of describing the knee region of the device's output characteristics, dispersion effects as well as gate diode behavior accurately. The models will be incorporated in a switched-mode amplifier topology and evaluations will be made to determine the suitability of MISHFETs in these amplifiers.

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Section: A Basic Mishfet-modelmentioning

confidence: 99%

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

Cumana

Lautensack

Eickelkamp

et al. 2008

2008 European Microwave Integrated Circuit Conference

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“…Comparing with other physical based [ 18 , 19 ] or empirical [ 16 ] compact model, the Angelov model [ 17 ] takes advantage of good convergence and much easier parameter extraction. As a result, an empirical compact modeling method [ 29 ] based on the Angelov theory was used in this work to model the drain-source current of the GaN HEMT.…”

Section: Model Descriptionmentioning

confidence: 99%

“…In the past few years, lots of work has been focused on the characterization of electrothermal [ 10 , 11 , 12 ] and trapping effects [ 13 , 14 , 15 ] in compact modeling of GaN high electron mobility transistors (HEMTs). Many compact models, such as EE_HEMT1 model [ 16 ], Angelov GaN model [ 17 ], MVSG model [ 18 ], and ASM GaN model [ 19 ], have been developed for accurate characterization of device performance. Besides the development of the core model mentioned above, other real device effect models, such as noise model [ 20 ] and gate current model [ 19 ], are also proposed to improve the core model.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

Mao

2018

Micromachines

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The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also been taken into consideration. AlGaN/GaN HEMTs with different gate width were utilized to validate the proposed model. Built on the proposed model, the effect brought by the I–V kink effect on large signal performance has been studied. Results show that the I–V kink effect will lead to the degradation of characteristics, including output power, gain, and power-added efficiency at the saturation region. Furthermore, the influence of the I–V kink effect was found to be related with the input power and the static bias point in this work. The time domain waveform and AC dynamic load line were used for validation of results based on simulation. The consequences of this paper will be useful for the optimization of practical circuit design.

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“…The EEHEMT model, as the most used commercial model, especially for III-V HEMTs has been under investigation for many years. [19][20][21][22][23] As far as we known, due to mechanism of two-dimensional electron gas (2DEG), the carrier transport from Si-doping plane to barrier layer is associated with the gate-source voltage. As a consequence of that, the coefficient of output conductance (κ) should be regarded as a function of V gs under normal operating condition instead of a constant used in the conventional EEHEMT model.…”

Section: Introductionmentioning

confidence: 99%

“…Even though this commercial model is not as precise as the Angelov model which also takes the derivative of transconductance into account, it does make a relative progress in predicting the DC and RF characteristics compared with the conventional MESFET models. The EEHEMT model, as the most used commercial model, especially for III–V HEMTs has been under investigation for many years 19–23 . As far as we known, due to mechanism of two‐dimensional electron gas (2DEG), the carrier transport from Si‐doping plane to barrier layer is associated with the gate‐source voltage.…”

Section: Introductionmentioning

confidence: 99%

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Zhang

Gao

2023

Int J Numerical Modelling

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A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter () as a function of gate‐to‐source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S‐parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70‐nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

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Modification of EEHEMT1 Model for Accurate Description of GaN HEMT Output Characteristics

Cited by 9 publications

References 3 publications

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

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