Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation

Abstract

Articles you may be interested inAnomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation AIP Advances 4, 057108 (2014);High energy light ions have been used to engineer the electrical properties of semi-insulating InP and GaAs by creation and annihilation of native defects. Due to light mass, high energy ions lose most of their energy during flight inside the material by electronic excitation, which also modifies the charge states of the defect. Imbalance in charge compensation caused by irradiation induced defect engineering results in the modification of resistivity of the semi-insulating samples. The activation energies of the defect levels responsible for the modified resistivity have been estimated from the measurement of thermally activated currents. It is shown that the modified charge compensation is due to annihilation and/or creation of native defects depending on the material ͑GaAs or InP͒ and the fluence of irradiated ions. It has also been observed that annealing does not have any effect on modified compensation in InP, but in the case of GaAs, compensation recovers after thermal annealing.

Role of Fermi-level depinning in quenching of V4+ related photoluminescence in semi-insulating 4H-SiC

“…The observed increase in TSC is caused by the irradiationinduced intrinsic defects which form energy levels within the bandgap. An attempt can be made to fit the experimental TSC data considering a Gaussian distribution D(E a ) of the defect energy levels [32],…”

Probing charge carrier compensation in high energy ion irradiated III–V semiconductor by Raman spectroscopy and Hall measurements

“…There are several studies on charge compensation in low energy (keV range) ion irradiated III–V semiconductors. However, in view of recent interest in high energy ion (HEI) irradiated semiconductors, the understanding of the mechanism of the charge compensation in these systems demands further attention. The effects of HEI irradiation on the carrier dynamics in n ‐GaAs had been analyzed by deep level transient spectroscopy (DLTS) and electrical measurements .…”