Modification by Ar and Kr ion bombardment of Mo/Si X-ray multilayers

Schlatmann, Rutger; Lü, Chao; Verhoeven, J.; Puik, E. J.; Wiel, M.J. van der

doi:10.1016/0169-4332(94)00108-1

Cited by 51 publications

(40 citation statements)

References 23 publications

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“…The sample holder rotates at 1 Hz to ensure a homogeneous coating in the azimuth direction. A detailed description of the setup can be found in [8]. The multilayers were deposited on 25x25mm 2 super-polished silicon substrates.…”

Section: Methodsmentioning

confidence: 99%

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Bruijn

Kruijs

Yakshin

et al. 2009

DDF

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Abstract. Thermally induced diffusion through the Si-on-Mo interface of multilayers with either amorphous or polycrystalline Mo layers has been investigated using grazing incidence and wide angle x-ray reflectometry. Diffusion through the Mo-on-Si interface was reduced by applying a diffusion barrier, allowing us to probe the diffusion at the opposite, Si-on-Mo interface. We found that diffusion through this interface is much slower for polycrystalline Mo than for amorphous Mo layers. The reason for this difference might be the larger defect concentration in amorphous Mo as compared to crystalline Mo.

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Section: Methodsmentioning

confidence: 99%

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Bruijn

Kruijs

Yakshin

et al. 2009

DDF

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“…7 For the fabrication of Mo/Si multilayers, Kr ϩ has been found to result in a better reduction of the interface roughness compared to Ar ϩ . 6 An optimal ion energy of 300 eV has been found by studying the deposition and ion beam modification of single Mo and Si films. 8 In Ref.…”

Section: Introductionmentioning

confidence: 99%

“…6 An optimal ion energy of 300 eV has been found by studying the deposition and ion beam modification of single Mo and Si films. 8 In Ref. 8, however, relatively thick layers ͑over 10 nm͒ were used compared to the usual layer thickness in a Mo/Si multilayer ͑below 5 nm͒.…”

Section: Introductionmentioning

confidence: 99%

“…3,4 During the last few years several types of ions have been investigated ͑Ar ϩ , Kr ϩ ). 5,6 Other ions, such as H ϩ and N ϩ , have been used to modify the chemical composition of the layers. 7 For the fabrication of Mo/Si multilayers, Kr ϩ has been found to result in a better reduction of the interface roughness compared to Ar ϩ .…”

Section: Introductionmentioning

confidence: 99%

“…8 In Ref. 8, however, relatively thick layers ͑over 10 nm͒ were used compared to the usual layer thickness in a Mo/Si multilayer ͑below 5 nm͒.…”

Section: Introductionmentioning

confidence: 99%

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Angular and energy dependence of ion bombardment of Mo/Si multilayers

Voorma

Louis

Bijkerk

et al. 1997

Journal of Applied Physics

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The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this study the parameters of Kr ϩ ion bombardment have been optimized within the energy range 300 eV-2 keV and an angular range between 20°and 50°. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength. The multilayer structures are analyzed further with small-angle reflectivity measurements using both specular reflectivity and diffuse x-ray scattering. The optimal smoothening parameters are obtained by determining the effect of ion bombardment on the interface roughness of the Si layer. The optimal conditions are found to be 2 keV at 50°angle of incidence with respect to the surface. These settings result in 47% reflectivity at 85°( ϭ14.4 nm͒ for a 16-period Mo/Si multilayer mirror, corresponding to an interface roughness of 0.21 nm rms. Analysis shows that the interface roughness is determined by ion induced viscous flow, an effect which increases with ion energy as well as angle of incidence. In order to determine the effect of intermixing of the Si and Mo atoms, the penetration depth of the Kr ϩ ions is calculated as a function of ion energy and angle of incidence. Furthermore, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates. © 1997 American Institute of Physics. ͓S0021-8979͑97͒04716-6͔

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Influence of surface morphology on angular photo‐electron spectroscopy measurements of nanometer thin overlayers

Zoethout

2014

Surface & Interface Analysis

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In order to investigate the boundaries of our angle‐resolved analyzer, we have prepared a variety of surface morphologies that are relevant for a wide class of surfaces in many research areas. These specimens are used as a template to be covered with a bi‐layer that is exhibiting perfect overlayer behavior when coated on a smooth template and with an overlayer that is expected to react with the template material. These sets are in‐vacuum characterized with angle‐resolved photo‐electron spectroscopy. Furthermore, the morphologies of both sets are characterized by atomic force microscopy. All experimental data as well as a model including a gradient interface between overlayer and substrate layer are used to discuss the limits of interpreting our angle‐resolved data with non‐smooth surfaces. It will be argued that this apparently wrong model for surface roughness can still be used to estimate the surface morphology when additional information is available either by prior knowledge of the growth behavior or by chemical information within the photo‐electron measurements. Copyright © 2014 John Wiley & Sons, Ltd.

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Modification by Ar and Kr ion bombardment of Mo/Si X-ray multilayers

Cited by 51 publications

References 23 publications

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Angular and energy dependence of ion bombardment of Mo/Si multilayers

Influence of surface morphology on angular photo‐electron spectroscopy measurements of nanometer thin overlayers

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