Modes of operation and radiation sensitivity of ultrathin SOI transistors

Mayer, D.C.

doi:10.1109/16.108190

Cited by 79 publications

(19 citation statements)

References 12 publications

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“…Since these properties are affected by radiation, this will impose an important constraint for their use in space applications or in other radiation environments [1]. By using tall triple gate devices (MuGFETs -multi-gate field effect transistors) the influence of the buried oxide can be limited.…”

Section: Introductionmentioning

confidence: 99%

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Put

Simoen

Collaert

et al. 2007

IEEE Trans. Nucl. Sci.

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The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated.A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.

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Section: Introductionmentioning

confidence: 99%

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Put

Simoen

Collaert

et al. 2007

IEEE Trans. Nucl. Sci.

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“…Although the radiation usually affects both gate oxide and buried oxide, the recent technologies have a very thin front gate oxide so that the main radiation effect on SOI MuGFET devices is related to the trapped charges in the buried oxide (BOX) and interface trap density at the silicon/BOX interface [11].…”

Section: Standardmentioning

confidence: 99%

Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices

Agopian

Bordallo

Simoen

et al. 2013

Solid-State Electronics

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“…Moreover, the presence of floating body effects, whereof some originate from the aggressive front gate oxide scaling [3], can limit to some extent their performance. The increasing gate coupling associated with the reduction of the semiconductor film thickness is expected to make SOI MOSFETs more sensitive to BOX charge trapping [4]. In our previous study [5][6][7], we have reported the degradation of the electrical performance in fully depleted (FD)-SOI n-MOSFETs by 7.5-MeV proton and 2-MeV electron irradiation.…”

Section: Introductionmentioning

confidence: 99%

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

Hayama

Takakura

Shigaki

et al. 2006

Microelectronics Reliability

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Modes of operation and radiation sensitivity of ultrathin SOI transistors

Cited by 79 publications

References 12 publications

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

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