2013
DOI: 10.1021/cr4002353
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Modern Microwave Methods in Solid-State Inorganic Materials Chemistry: From Fundamentals to Manufacturing

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Cited by 401 publications
(322 citation statements)
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“…Such insight requires the development of in-situ analysis instrumentation to perform time-resolved experiments. 17 Conventionally Al4C3 is prepared via direct carbonisation or carbothermal reduction-carbonisation techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Such insight requires the development of in-situ analysis instrumentation to perform time-resolved experiments. 17 Conventionally Al4C3 is prepared via direct carbonisation or carbothermal reduction-carbonisation techniques.…”
Section: Introductionmentioning
confidence: 99%
“…MAH method has demonstrated its efficiency in the synthesis of materials with new and/or intensified properties [17][18][19][20][21] . The advantages of this synthesis method are the strong reduction over the time and temperatures even compared with hydrothermal and/or solvothermal conventional methodologies 22,23 .…”
Section: Introductionmentioning
confidence: 99%
“…Microwave annealing (MWA) has been reportedly used in organic synthesis, 1 solid-state in organic materials, 2 and the mixture of nanostructures and liquids, 3 owing to its unique properties, such as volumetric, instantaneous, and material-selective heating. 2 In recent years, MWA techniques have also been explored in semiconductor processing, including dopant activation in silicon, 4,5 recrystallization of amorphous silicon films, 6 silicide formation, 7 preparation of reduced graphene oxide, 8 processing of Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs) 9 and In-GaZn-O thin film transistors.…”
Section: Introductionmentioning
confidence: 99%
“…2 In recent years, MWA techniques have also been explored in semiconductor processing, including dopant activation in silicon, 4,5 recrystallization of amorphous silicon films, 6 silicide formation, 7 preparation of reduced graphene oxide, 8 processing of Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs) 9 and In-GaZn-O thin film transistors. 10 These experiments report significantly lower temperature associated with MWA as compared with conventional thermal annealing (CTA) techniques, such as furnace annealing and rapid thermal annealing.…”
Section: Introductionmentioning
confidence: 99%