Modern analysis of ion channeling data by Monte Carlo simulations

Nowicki, Ł.; Turos, A.; Ratajczak, R.; Stonert, A.; Garrido, F.

doi:10.1016/j.nimb.2005.06.129

Cited by 112 publications

(85 citation statements)

References 12 publications

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“…The RBS/C spectra were fitted using McChasy, a Monte Carlo simulation package allowing the quantitative analysis of channeling spectra (Nowicki et al 2005). The final outcome of this analysis is the damage accumulation kinetics, i.e., the plots of the damage level versus the irradiation fluence.…”

Section: Methodsmentioning

confidence: 99%

Comparative study of radiation-induced damage in magnesium aluminate spinel by means of IL, CL and RBS/C techniques

et al. 2016

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International audienceA comparative study of damage accumulation in magnesium aluminate spinel (MgAl2O4) has been conducted using ionoluminescence (IL), cathodoluminescence (CL) and Rutherford Backscattering Spectrometry/channeling (RBS/C) techniques. MgAl2O4 single crystal and polycrystalline samples were irradiated with 320 keV Ar+ ions at fluencies ranging from 1 × 1012 to 2 × 1016 cm−2 in order to create various levels of radiation damage. RBS/C measurements provided quantitative data about damage concentration in the samples. These values were then compared to the luminescence measurements. The results obtained by IL and RBS/C methods demonstrate a two-step character of damage buildup process. The CL data analysis points to the three-step damage accumulation mechanism involving the first defect transformation at fluencies of about 1013 cm−2 and second at about 1015 cm−2. The rate of changes resulting from the formation of nonluminescent recombination centers is clearly nonlinear and cannot be described in terms of continuous accumulation of point defects. Both, IL and CL techniques, appear as new, complementary tools bringing new possibilities in the damage accumulation studies in single- and polycrystalline materials

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Section: Methodsmentioning

confidence: 99%

Comparative study of radiation-induced damage in magnesium aluminate spinel by means of IL, CL and RBS/C techniques

et al. 2016

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“…The Monte Carlo computer code McChasy described in detail elsewhere [5] was used for the purpose. A new function, the bent channel model [6] in the Monte Carlo simulations for channeling in single crystals containing extended defects such as: clusters, dislocations, loops, stacking faults, etc.…”

Section: Methodsmentioning

confidence: 99%

Defect Transformations in Ion Bombarded InGaAsP

et al. 2011

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Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV 4 He ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × 10 12 to 6 × 10 14 at./cm 2 . Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.

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“…Finally, the Monte Carlo simulation McChasy computer code [14] was used to t the cRBS spectra. The recent version of this program allowed for an analysis of the channeling spectra yielding the distribution of point defect structures (simulated as randomly displaced atoms,…”

Section: Introductionmentioning

confidence: 99%

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

et al. 2015

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The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV 4 He ions. Ion implantation to a uence of 1.2 × 10 16 ions/cm 2 was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800• C in argon ow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Dierences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery eect.

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Modern analysis of ion channeling data by Monte Carlo simulations

Cited by 112 publications

References 12 publications

Comparative study of radiation-induced damage in magnesium aluminate spinel by means of IL, CL and RBS/C techniques

Comparative study of radiation-induced damage in magnesium aluminate spinel by means of IL, CL and RBS/C techniques

Defect Transformations in Ion Bombarded InGaAsP

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

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