Abstract:Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications A study of moderately in situ doped polycrystalline silicon deposition from SiH 4 , PH 3 , and H 2 by single-wafer reduced pressure chemical vapor deposition has been carried out. The process window which yielded P concentrations on the order of 10 19 cm Ϫ3 was a pressure of 80 Torr in a hydrogen carrier with a PH 3 /SiH 4 mole fracti… Show more
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