Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP)

Ilie, Filip

doi:10.1007/s11051-012-0752-5

Cited by 18 publications

(20 citation statements)

References 14 publications

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“…This value was estimated to be 100-1000 nN for a 200 nm nanoparticle following the method used in [51,52] and was in line with the modeling values from the literature [5,[10][11][12]14,51,52]. The use of surfactants showed a nonlinear behavior of the lateral forces, observing a normal force, for 250 nm nanoparticles, as shown in Figure 8.…”

Section: Stabilization Of Cmp Slurriessupporting

confidence: 81%

“…By scanning with an atomic force microscope (AFM) of the selective layer after the chemical mechanical planarization (CMP) process it is found that the surface of the oxide layer is removed at different rates depending on the depth of removal and the pH of the solution. CMP is a material removal and surface smoothing process, which is possible by the combination of chemical and mechanical interactions [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…To optimize selective layer CMP it is necessary to control the chemical and mechanical interactions at the interface between the slurry and selective layer during the planarization process [4,5]. It will also require a deeper understanding of the material removal rate (MRR) during planarization and a determination of the specific role of each chemical constituent in the slurry [6].…”

Section: Introductionmentioning

confidence: 99%

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Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

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This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer. The paper aims at a better understanding of the planarization (polishing) and micromachining. The planarization becomes effective if the material removal rate (MRR) is optimal and the surface defects are minimal. The pH of the slurry plays a very important role in removing the selective layer by CMP, and hydrogen peroxide (H 2 O 2 ) is the most common oxidizer used in CMP slurry. The purpose of this paper is the analysis of the pH effect on the etching rate (ER) and on the behavior of selective layer polishing by a constant concentration of H 2 O 2 and the influence of nanoparticles size and concentration on selective layer surface CMP. The nanoparticle size used is 250 nm. The MRR results through CMP and ER have been shown to be influenced by the presence of oxides on the selective layer surface and have been found to vary with the slurry pH at constant H 2 O 2 concentrations. The CMP slurry plays an important role in the CMP process performance and should be monitored for optimum results and minimal surface defects. The paper analyzes the impact of chemical-mechanical, inter-nanoparticle, and pad-nanoparticle-substrate interactions on CMP performance, taking into account the state of friction at the interface, by measuring the friction force. Selective layer CMP optimization studies were required to control the chemical and mechanical interactions at the interface between the slurry and the selective layer, the slurry chemistry, the properties, and the stability of the suspended abrasive nanoparticles.

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Section: Stabilization Of Cmp Slurriessupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

Self Cite

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“…[14][15][16] Recently, several atomic force microscopy (AFM)-based techniques have been used to measure the interaction forces between various surfaces in CMP for better understanding of the removal mechanisms.…”

Section: -11mentioning

confidence: 99%

“…13 COF depends on the applied down pressure, particle-surface interactions, and material properties of the surfaces in contact. [14][15][16] In Figures 4.1 and 4.2, the COF data and removal rates of SiO 2 films, respectively, are shown as a function of the applied down pressure. The COF and removal rate data were obtained by polishing SiO 2 films with 1 wt% ceria slurry without any additive and with 15 and 25 mM DADMAC all at pH 4.…”

Section: Afm Force Measurements-mentioning

confidence: 99%

AFM-Based Study of the Interaction Forces between Ceria, Silicon Dioxide and Polyurethane Pad during Non-Prestonian Polishing of Silicon Dioxide Films

Korkmaz

Vahdat

Trotsenko

et al. 2015

ECS J. Solid State Sci. Technol.

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A colloidal AFM-based method was used to understand the role of diallyldimethyl ammonium chloride (DADMAC) molecules in non-Prestonian silicon dioxide removal obtained using ceria-based slurries. A series of force-distance measurements between silicon dioxide films, polyurethane IC1000 polishing pad and ceria abrasives in liquid media with and without DADMAC molecules were made. It was shown that at 15 mM concentration, DADMAC molecules yield non-Prestonian behavior by interfering between ceria particles and the oxide film. The effects of the DADMAC additive on the removal rates of the oxide films and their corresponding coefficients of friction (COFs) values were also investigated. Finally, the correlation between AFM force measurements, removal rates and COF values measured during polishing are discussed. Interestingly, below a threshold COF value of ∼0.23 to 0.24, corresponding to a threshold down pressure of ∼2psi for both 15 mM and 25 mM DADMAC concentration, no oxide film removal was observed. Chemical Mechanical Planarization (CMP) is a critical step during the fabrication of ultra large scale integrated circuits (ULSICs) in the semiconductor industry. Since the feature dimensions of current ICs are continually scaling down (latest technology node of 14 nm was recently announced by Intel corp.), the demands on surface planarity of various films have become more stringent. An improved understanding of polishing mechanisms can help to achieve the desired polishing requirements. These requirements include minimizing defects such as surface roughness, micro-scratches, etc. 1,2One of the main applications of CMP in the front-end-of-the-line is shallow trench isolation (STI) fabrication. The STI 3 structure isolates two adjacent semiconductor device components (transistors, diodes, etc.) preventing electrical current leakage between them. Application of CMP for fabricating these STI structures has been widely studied. However, precise end-point detection during the fabrication of these structures remains a challenge. As a result, due to the non-uniform polishing of the oxide film across the wafer, 4 over-polishing time is almost always required to remove any residual oxide from the nitride areas. This can result in considerable dishing in the oxide-filled trenches in the STI structure. Dishing takes place if the oxide material inside the trenches is polished, especially at the low pressures created by contact with the polishing pad. One efficient method that can minimize dishing is to use a non-Prestonian polishing slurry [5][6][7] which causes negligible removal below a threshold applied downward pressure. Recently, it was shown that a ceria-based slurry containing 15 mM diallyldimethyl ammonium chloride (DADMAC) as an additive resulted in non-Prestonian oxide removal 7 with negligible removal below ∼2 psi applied pressure. Based on the measurements of the adsorption strength of DADMAC molecules on ceria and silica surfaces, using various techniques including thermo-gravimetric analysis (TGA) and UV-visible sp...

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Chemical Mechanical Polishing for SiO2 Film Using Polystyrene@ceria (PS@CeO2) Core–Shell Nanocomposites

Chen

Wang

Qin

et al. 2015

J Inorg Organomet Polym

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Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP)

Cited by 18 publications

References 14 publications

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

AFM-Based Study of the Interaction Forces between Ceria, Silicon Dioxide and Polyurethane Pad during Non-Prestonian Polishing of Silicon Dioxide Films

Chemical Mechanical Polishing for SiO2 Film Using Polystyrene@ceria (PS@CeO2) Core–Shell Nanocomposites

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