Models and algorithms for three-dimensional topography simulation with SAMPLE-3D

Scheckler, E.W.; Neureuther, Andrew R.

doi:10.1109/43.259945

Cited by 49 publications

(26 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There have been a number of techniques used in etching and deposition problems, such as the level set method (Osher and Sethian 1988;Sethian and Adalsteinsson 1997), the string algorithm (Jewett et al 1977), the method of characteristics (Shaqfeh and Jurgensen 1989), and the cellbased method (Scheckler and Neureuther 1994). The level set method is used here for memory and computation efficiency and its ease of handling topological change.…”

Section: Profile Evolution Algorithmmentioning

confidence: 99%

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Zhou

et al. 2014

Microsyst Technol

View full text Add to dashboard Cite

There have been a number of researches focusing on the simulation of silicon anisotropic wet etching (Kakinaga et al. 2004;Zhou et al. 2007Zhou et al. , 2009). All the simulation results have contributed to improving and optimizing the practical process. However, the ICP process itself has a vast number of process variables as pressure, gas flow rates, and input power that influence the process result (Läermer and Schilp 1994). Modeling of the ICP process is much more difficult than that of silicon anisotropic wet etching. The Bosch process consists of multiple cycles of alternating etching and deposition steps, advancing the trenches formed in small increments until the expected aspect ratio is reached. Each phase lasts several seconds. An attempt has been made to model the Bosch process (Zhang et al. 2005;Chen et al. 2013;Zhou et al. 2004; Radjenovic and Radmilovic-Radjenovic 2012; Ertl and Selberherr 2010). A two-dimensional (2-D) simulator by using a string-cell hybrid method for tracking surface evolution with a particle transport model was developed (Zhou et al. 2004), which is suitable for simulations in geometries with translational symmetry in one direction. 3-D simulations of the Bosch process have been reported recently (Radjenovic and Radmilovic-Radjenovic 2012; Ertl and Selberherr 2010). A simplified 3-D model has been developed that uses the etching rates of silicon and polymer as input parameters (Radjenovic and Radmilovic-Radjenovic 2012), which significantly reduces computational time while it is incapable of simulating several phenomena such as the lag effect (Gottscho et al. 1992). A Monte Carlo method was used to calculate local particle fluxes and etching and deposition rates (Ertl and Selberherr 2010), which incorporates higher order re-emissions of particles, but demands long computational time and memory consumption. Based on the particle transport model (Zhou et al. 2004) and the level set method (Osher and Sethian 1988; Sethian and Adalsteinsson 1997), Abstract A deep reactive ion etching (DRIE) process (Bosch process) is used extensively in the fabrication of microelectromechanical systems (MEMS). Modeling and simulation studies have helped improve our understanding and process design. The Bosch process consists of multiple cycles of alternating etching and deposition steps. Based on a narrow band level set method, by integrating etching simulation and deposition simulation modules, a simulation system is proposed for three-dimensional (3-D) simulation of the Bosch process with arbitrarily complex mask shapes. To verify the simulation system, a series of simulations and experiments have been performed. The simulation results are in good agreement with the experiments. The method may be used to optimize the practical Bosch process and to design and control the profile of high-aspect ratio microstructures.

show abstract

Section: Profile Evolution Algorithmmentioning

confidence: 99%

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Zhou

et al. 2014

Microsyst Technol

View full text Add to dashboard Cite

show abstract

“…There are five methods for lithography simulation. These are the ray-tracing method [13][14][15], the string method [14][15][16], the cell removal method [14,17,18], the morphological operations method [19], and the cellular automata (CA) method [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

A Self-regulation Mechanism of the Resist Development Process in Integrated Circuit Fabrication and its Phase-space Picture

Karafyllidis

2005

J Computer-Aided Mater Des

View full text Add to dashboard Cite

Lithography is the most important process in integrated circuit fabrication. Lithographic profile defect simulator based on cellular automata revealed a self-regulation mechanism of the resist development process, which is expressed as a tendency of the etch-front to retain its parabolic shape. The phase-space picture of this mechanism is an attractor and it is certified that the resit-etchant system spends much time near the unperturbed state.

show abstract

“…In order to predict the profile evolution with enough accuracy to represent the very small structures such as trenches, contacts or vias, 3-D approaches to topography modeling have been recently developed [31], [32]. The full spectrum of these topography models covers lithography, etching and deposition modules.…”

Section: Simulation Tool Hierarchymentioning

confidence: 99%

Perspectives on technology and technology-driven CAD

Dutton

Strojwas

2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

View full text Add to dashboard Cite

Abstract-Computer-aided design (CAD) techniques are absolutely essential to harness the ever-increasing complexity of the microsystem design. Similarly, the technology CAD (TCAD) tools played a key role in the development of new technology generations. Although there is a common belief that the TCAD tools have been trailing the technology development, the situation has been changing very significantly especially over the last decade. For the deep submicrometer (DSM) devices, these tools provide a better insight than any measurement techniques and they have become indispensable in the new device creation. Moreover, these tools after calibration to a relatively small number of experiments, exhibit very impressive predictive power, which is utilized to speed up the technology integration and transfer to volume manufacturing. This results in very manufacturable high-yielding products that can be ramped up much faster than in the past decade, which is absolutely necessary given the huge costs of integrated circuit fabrication lines, short product lifecycles and penalties for being late to the market place. In this paper, we will present our perspective on the semiconductor technology development, and highlight the rapid growth of TCAD and its strategic use in semiconductor industry.

show abstract

Models and algorithms for three-dimensional topography simulation with SAMPLE-3D

Cited by 49 publications

References 31 publications

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

A Self-regulation Mechanism of the Resist Development Process in Integrated Circuit Fabrication and its Phase-space Picture

Perspectives on technology and technology-driven CAD

Contact Info

Product

Resources

About