Modelling the Vertical Bridgman growth of cadmium telluride

Parfeniuk, C.; Weinberg, F.; Samarasekera, I. V.; Schvezov, Carlos Enrique; Li, L.

doi:10.1016/b978-0-08-040413-4.50038-5

Cited by 5 publications

(6 citation statements)

References 14 publications

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“…The critical resolved shear stress for Cd 0.96 Zn 0.04 Te has been measured by Parfeniuk et al 41 and Imhoff et al 42 between 350-1150 K. Assuming the CRSS is an exponential function of temperature, 43 the data of Parfeniuk and Imhoff can be extrapolated up to the melting point and is fitted by…”

Section: Thermoelastic Modulusmentioning

confidence: 99%

Temperature dependence of the elastic constants of solid and liquid Cd0.96Zn0.04Te obtained by laser ultrasound

Queheillalt

Wadley

1998

Journal of Applied Physics

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Section: Thermoelastic Modulusmentioning

confidence: 99%

Temperature dependence of the elastic constants of solid and liquid Cd0.96Zn0.04Te obtained by laser ultrasound

Queheillalt

Wadley

1998

Journal of Applied Physics

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“…The shear stress τ is then equal to 1.5×10 -3 ×0.8×10 10 ~ 12 MPa. The Cd 0.92 Zn 0.08 Te CRSS, as measured by Parfeniuk et al [14], was found to be 1 MPa at 860 °C, ~2 MPa at 640 °C, ~5 MPa at 560 °C. This means that the calculated shear stress is of the same order as the CRSS values, and even slightly higher.…”

Section: 3mentioning

confidence: 97%

Fundamentals of the CdTe and CdZnTe bulk growth

Triboulet

2005

phys. stat. sol. (c)

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The CdTe and CdZnTe growth are reviewed. After presenting briefly the most recent results concerning the phase equilibria in the Cd-Te system, the impact of the characteristics of the Cd-Te chemical bond on the CdTe crystal growth are discussed. The behaviour of Zn alloying in CdTe is then presented at macroscopic and microscopic scale. Furthermore, the strains introduced by the Zn segregation in the alloys are estimated and shown close to the CZT CRSS. Some improvements in the CZT growth are finally presented and discussed: the adjustment of the CZT stoichiometry, the Zn concentration uniformity issue and the strain issue in the alloys which can be overcome by microgravity growth, self-seeding from a free liquid surface, solid state recrystallization and/or dewetting.1I ntroduction CdTe has attracted great interest and found several industrial applications since now forty years. It shows unique properties making it important and very suitable for several applications like photovoltaic conversion, nuclear detection, application for which it has a tremendous potential, mainly for medical purposes, high performance electro-optic modulators and photorefractive devices. It presents both types of conductivity making diode technology and field effect transistors possible. CdTe-based semimagnetics, like CdMnTe, display extremely exciting properties which have not been so far completely exploited. Furthermore, CdZnTe is used as a substrate for the epitaxial deposition of HgCdTe layers.In view of all these applications, considerable efforts have been dedicated since more than forty years to the crystal growth of CdTe which will be reviewed in close relationship with its intrinsic properties, mainly those that come directly from the characteristics of the Cd-Te chemical bond.2P hase equilibria in the Cd-Te system Crystal growth of CdTe requires precise knowledge of the existence regions of the solid, liquid and gas phases with respect to temperature, pressure and composition. For this purpose, the temperature versus composition, T-x , component pressure or total pressure versus temperature, p-T or P-T, and finally p-T-x or P-T-x diagrams have been experimentally determined and theoretically modeled. In order to control the stoichiometry of the crystals, the deviations from which affect strongly their semiconducting properties, the knowledge of the extent of the homogeneity domain and of the position of the stoichiometric line inside the three phase boundary is essential as well.After many experimental investigations and theoretical studies [1], the Cd-Te phase diagram has been revisited from total vapor pressure scanning experiments by J.H. Greenberg [2]. The determination of the *

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“…Variables included temperature, applied stress, initial dislocation density, and dopant concentration. The specimen grips were modeled after the designs used by Parfeniuk et al 4 and Balasubramanian and Wilcox. Samples designated PK-contained 3.5% at Zn, were 1.0 mm thick, and were oriented with [112] tensile axes.…”

Section: A Deformation Experimentsmentioning

confidence: 99%

“…Previous elevated temperature, mechanical property measurements in this material [2][3][4][5][6][7] have focused on collecting stress-strain data, including critical resolved shear stress (CRSS), for CdTe-based compounds. Since inelastic deformation is time-and rate-dependent, especially at high homologous temperatures, CRSS does not uniquely define the stress required to initiate inelastic deformation.…”

Section: Introductionmentioning

confidence: 99%

Creep of CdZnTe at high homologous temperatures

1999

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The creep behavior of single-crystal Zn-doped CdTe was examined in the small strain regime. Specimens from two different sources, with tensile axes [110] and [112], were deformed at 1073 and 1173 K. Strain rates were of order 10 −6 to 10 −7 s −1 . A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sublimation of test specimens at elevated temperatures. Some tests showed a transition from secondary to tertiary creep at low levels of strain. An activation energy for steady-state creep was calculated as Q C ‫ס‬ 1.46 eV, and the creep exponent was found to be approximately n ‫ס‬ 4.2. These results, coupled with reported activation energies for self-diffusion of Cd in Cd(Zn)Te, indicate a dislocation creep mechanism. Etch pit density was measured before and after deformation and approached a common level regardless of initial etch pit density.

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Modelling the Vertical Bridgman growth of cadmium telluride

Cited by 5 publications

References 14 publications

Temperature dependence of the elastic constants of solid and liquid Cd0.96Zn0.04Te obtained by laser ultrasound

Temperature dependence of the elastic constants of solid and liquid Cd0.96Zn0.04Te obtained by laser ultrasound

Fundamentals of the CdTe and CdZnTe bulk growth

Creep of CdZnTe at high homologous temperatures

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