2017
DOI: 10.1016/j.surfcoat.2016.12.054
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Modelling the EB-PVD thermal barrier coating process: Component clusters and shadow masks

Abstract: Electron beam-physical vapour deposition (EB-PVD) is a commonly employed process for the production of thermal barrier coatings (TBCs), used in high performance applications such as gas turbines high-pressure aerofoil blades for the aerospace industry. Computer modelling can contribute to improved control of the coating process, important to support a continuous drive for increased efficiency. This paper considers two aspects associated with the EB-PVD coating of TBCs for commercial application: firstly, that … Show more

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Cited by 6 publications
(5 citation statements)
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References 21 publications
(25 reference statements)
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“…For the three-pin model, same as in Ref. [4], the center of the disk is used as the point of rotation of the three-pin structure. The rotation axis is parallel to the disk's normal.…”
Section: Boundary Conditions and Materials Propertiesmentioning
confidence: 99%
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“…For the three-pin model, same as in Ref. [4], the center of the disk is used as the point of rotation of the three-pin structure. The rotation axis is parallel to the disk's normal.…”
Section: Boundary Conditions and Materials Propertiesmentioning
confidence: 99%
“…The model is firstly validated using disk and cylinder shaped components, followed by a three-pin component as in Ref. [4]. The validation studies show that the developed model results are in good 4 agreement with either the analytical model or experimental measurements.…”
Section: Introductionmentioning
confidence: 96%
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“…In particular, the studies proposed the coating thickness uniformity model [8,9], the cosine analytical and generic computational model [10], and the inverse power law relationship between thickness and source-to-substrate distance was considered [11]. Recent studies also applied true line-of-sight models, based on the inverse square law and also taking into account the effect of shadow masks [12]. In [13], the computational level set method was also applied for tracking topographic change of a surface.…”
Section: Introductionmentioning
confidence: 99%
“…Determining the topographic profile of the deposition when the wafer contains arbitrary geometry, high-aspect-ratio openings, under rotation and inclination is not trivial 22 -with several solutions having been proposed which make use of numerical methods. [23][24][25][26][27][28][29][30][31][32][33] The main parameters in this process are: the resist thickness, the resist opening width, the resist profile, the evaporation angle, the evaporated material thickness, the lateral sidewall and vertical evaporation onto the mask itself.…”
Section: Introductionmentioning
confidence: 99%