Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET

Yeo, Howe Li; Tseng, King Jet

doi:10.1109/apec.2016.7468308

Cited by 11 publications

(2 citation statements)

References 17 publications

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“…The following equations are based on functions reported in order of complexity. In [39], two equations for C GD and C DS have been proposed:…”

Section: Parasitic Capacitancementioning

confidence: 99%

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

Bottaro,

Rizzo

2023

Energies

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GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. The use of circuit models of power devices is essential for the optimal design of power converters, but while they have been deeply investigated for power MOSFETs and IGBTs, GaN HEMT models are still in their early stages. This paper first discusses the main similarities and differences between conventional MOSFETs and GaN HEMTs in terms of the datasheet information that the device manufacturers use to obtain the behavioral models that they usually provide as Spice-like netlists. Then, it highlights the strengths and weaknesses of using the behavioral models of MOSFET for GaN HEMT. To achieve this aim, a study of the existing GaN HEMT models revealed the lack of a proper modeling strategy for the dynamic conduction resistance, which is the most critical aspect of HEMT modeling. The difficulty is due to the dependence of the dynamic conduction resistance on quantities related to the application, which is a behavior absent in power MOSFETs. Consequently, future research efforts on GaN HEMT modeling must face this issue.

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“…The following equations are based on functions reported in order of complexity. In [39], two equations for C GD and C DS have been proposed:…”

Section: Parasitic Capacitancementioning

confidence: 99%

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

Bottaro,

Rizzo

2023

Energies

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“…[21], where the used parameters are given in Table 2. Those equations are inspired by Sigmoidtype functions used to model power semiconductor devices static characteristics and capacitance-voltage characteristics [22,23]. We modified tangent hyperbolic functions to represent strong nonlinearity voltage dependence of each interelectrode capacitance, where we can define the variation boundary (parameters b n , e n and h n ), variation trend (parameters c n , f n and i n ) and variation centre (d n , g n and j n ).…”

Section: Model Principlementioning

confidence: 99%

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Evans

Johnson

et al. 2021

Energies

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In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

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Analyzing false turn-on events with varying gate drive parameters in high voltage GaN devices

Kashyap,

Sarkar

2024

Microelectronics Reliability

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Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET

Cited by 11 publications

References 17 publications

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT

A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Analyzing false turn-on events with varying gate drive parameters in high voltage GaN devices

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