Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

Siozade, Laure; Leymarie, J.; Disseix, P.; Vasson, A.; Mihailovic, M.; Grandjean, N.; Leroux, M.; Massies, J.

doi:10.1016/s0038-1098(00)00249-0

Cited by 22 publications

(25 citation statements)

References 18 publications

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“…We distinguish between the luminescent intensity emerging from a plane z inside the WO 3 film, and going directly towards the detector through the air/WO 3 interface (denoted I a/w ), and the intensity, which is reflected back at the WO 3 /CaF 2 interface (I w/c ), and then directed onto the detector through the air/WO 3 interface. 29 In the former case we have:…”

Section: Photoluminescencementioning

confidence: 99%

Optical properties of nanocrystalline WO3 and WO3-x thin films prepared by DC magnetron sputtering

Johansson

Zietz

Niklasson

et al. 2014

Journal of Applied Physics

107

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The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with The origin of peak P2 is more uncertain, but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric, and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

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Section: Photoluminescencementioning

confidence: 99%

Optical properties of nanocrystalline WO3 and WO3-x thin films prepared by DC magnetron sputtering

Johansson

Zietz

Niklasson

et al. 2014

Journal of Applied Physics

107

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“…Similar calibration of the TDOA spectra for InGaN/GaN heterostructures was proposed in Ref. [14]. The principle of that is the following: by neglecting any diffusion phenomenon, the TDOA signal is proportional to the absorption A which is equal to 1-R-T, where R and T are respectively the reflection and transmission intensities.…”

Section: The Mie Resonances In Innmentioning

confidence: 81%

Thermally detected optical absorption in sophisticated nitride structures

Vasson¹,

Shubina²,

Leymarie³

2005

phys. stat. sol. (c)

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The thermally detected optical absorption (TDOA) is applied to elucidate peculiarities of absorption in nitride structures of unusual morphology like GaN nanocolumns or InN layers with various imperfections. A study of GaN structures permits us to establish position of an absorption edge in TDOA spectra. We demonstrate that the absorption edge is different in GaN regions of opposite polarities. In InN with metallic In inclusions, this technique enable separation of InN interband absorption and extinction related to the Mie resonances, if the latter are below the principal absorption edge.

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“…The model, described in Ref. [13] assumes that the TDOA signal is proportional to the intensity of light absorbed in the sample if the diffusion is neglected. Using the energy conversation law and calculating the reflected and transmitted intensities in a 2 Â 2 transfer matrix formulation, we are able to derive the absorption intensity and fit the experimental TDOA spectra.…”

Section: Resultsmentioning

confidence: 99%

“…For the InGaN bandgap dependence on In composition we used the results reported in [13] and a mean conduction band offset of 50% of the total gap mismatch. All the other parameters for InGaN were obtained by linear interpolation between GaN and InN.…”

Section: Optical Density Calculation Versus Experimental Results and mentioning

confidence: 99%

Optical Investigations and Absorption Coefficient Determination of InGaN/GaN Quantum Wells

Kvietkova¹,

Siozade²,

Disseix³

et al. 2002

phys. stat. sol. (a)

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Thermally detected optical absorption (TDOA) and photoluminescence experiments were carried out on InGaN/GaN multi-quantum well (MQW) structures grown by molecular beam epitaxy on (0001) sapphire substrates. The absorption coefficient of the QW was extracted by modelling the TDOA lineshape. These experimental findings are confronted with the theoretical optical density evaluated within envelope function calculations of transition energies and oscillator strengths, including the electric field effects. The results show a relative agreement obtained by using a smaller value of the electric field than it has been predicted theoretically. However, other effects must be included in our model in order to achieve a realistic description of the absorption process in this sophisticated system.

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Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

Cited by 22 publications

References 18 publications

Optical properties of nanocrystalline WO3 and WO3-x thin films prepared by DC magnetron sputtering

Optical properties of nanocrystalline WO3 and WO3-x thin films prepared by DC magnetron sputtering

Thermally detected optical absorption in sophisticated nitride structures

Optical Investigations and Absorption Coefficient Determination of InGaN/GaN Quantum Wells

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