Modelling of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) of silicon in SiH/sub 2/Cl/sub 2/-HCl-H/sub 2/ system

Kongetira, Poonacha; Neudeck, G.W.; Takoudis, Christos G.

doi:10.1109/ugim.1995.514138

Cited by 1 publication

(2 citation statements)

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“…However, the primary concern with all LE n multipatterning processes is alignment control. [32,33] It is virtually impossible to achieve an exact alignment between multiple masks at these process nodes, which makes it challenging to achieve the desired yields. The advent of EUV lithography finally offered new resolution capabilities, and many process layers that used TP or QP with deep ultraviolet (DUV) lithography were re-engineered to use a single EUV mask.…”

Section: Ald For Multiple Patterningmentioning

confidence: 99%

“…Initial reports on selective deposition have been reported and modeled by G. Neudeck and Kastelic in the mid-to-late 1980s. [32,33] A semiempirical expression was developed and reported for the selective epitaxial growth (SEG) and epitaxial lateral overgrowth of silicon in a pancake and barrel reactors, respectively. AS-ALD is achieved by area activation using promotor-type molecules and area deactivation using inhibitor-type molecules.…”

Section: Area-selective Aldmentioning

confidence: 99%

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Atomic Layer Deposition Beyond Thin Film Deposition Technology

Yasmeen

Ryu

Lee

et al. 2022

Adv Materials Technologies

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Atomic layer deposition (ALD) is well known as the most advanced coating technique so far due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is not limited to coating technologies alone; however, over the past few decades, it has been extended beyond coating technologies to address several bottlenecks in the semiconductor industry. This short review article provides a summary of previous studies published on various approaches to using ALD to overcome the technological challenges in Si device fabrication beyond, that is, ALD for multiple patterning, area‐selective atomic layer deposition, atomic layer etching, and ALD for dry photoresist. The purpose of this review is to determine the existing trend in ALD for noncoating applications and to understand and provide a layout of what ALD can bring in the future. In addition, it helps in appreciating the potential of ALD in existing and future noncoating processes. Furthermore, this study provides a developing route for ALD in other noncoating applications in the semiconductor industry. It is believed this review would aid ALD researchers in its use in various noncoating processes in the future to extend Moore's law.

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Section: Ald For Multiple Patterningmentioning

confidence: 99%

Section: Area-selective Aldmentioning

confidence: 99%