Abstract:This paper presents experimental and numerical results for the dual-gate MOSFET (DGMOSFET) normalized 1/f noise parameter B/I D 2 in linear working region. In modelling, gate-to-gate interelectrode space influence is taken into account with the fitting parameter m, which is defined as the ratio of inner transistors channel lengths. Model and methodology for the normalized 1/f noise parameter calculation for the DGMOSFET linear region have been proposed. The model is based on the ac current approach in the DGMO… Show more
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