Abstract:The aim of this work is to present a two-dimensional analysis for different gate stack dielectric structured n-MOSFETs with carrier quantization effects. The model is developed using Green's function for solving Poisson's equation, without implying the extensive effort required for a fully self-consistent solution of the Schrödinger and Poisson equations. Explicit results for potential distribution, threshold voltage and drain current, with different structural and bias parameters, have been presented, typical… Show more
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