Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors

Arshad, Misbah; Jamil, Erum; Shuja, Ahmed; Qayyum, Faraz; Hassan, Gul

doi:10.1007/s12633-022-01766-9

Cited by 1 publication

(1 citation statement)

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“…This type of integration is called "Smart Power Integrated circuit", which can be translated as "intelligent" power integrated circuit [7][8][9][10]. In power electronics, bipolar transistors [11] and Thyristors [12] were the first command power devices that can be used in several power applications, but these devices are not suitable for high frequency switching applications. On the other hand, the evolution of technologies in the field of integrated circuits has allowed the development of power MOSFET transistors capable of operating at high frequency, such as VDMOS transistors [13], LDMOS [14].…”

Section: Introductionmentioning

confidence: 99%

I_V Characteristic of Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) Power Transistor Using Silvaco-TCAD

Bella¹,

Ghoumazi²

2022

EJEE

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Today's electronics scenario finds itself with the advancement in the field of foremost important component MOSFET. Though one-step ahead of MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices in power handling capability. In this paper, the results of simulation of VDMOS transistor have been presented. Additionally, the transfer characteristics of the VDMOS transistor are simulated. The drain current (Ids) as a function of the gate voltage and of the drain voltage was simulated for different work function values as well as for several oxide thickness and gate lengths, respectively. The results obtained show that when the work function and the oxide thickness as well as the gate length increase, the threshold voltage also increases. The VDMOS transistor is virtually fabricated using ATHENA software and simulation is done with help of ATLAS software and all graphs are plotted using Tonyplot in Silvaco.

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