Modelling and design of optically controlled MMIC oscillators

Abstract

The design and performance of an optically injectionlocked X-band MMIC HEMT oscillator is reported and compared with an earlier MMIC MESFET VCO. The transmission of FM signals using the optically injectionlocked HEMT oscillator is demonstrated. Accurate largesignal models for illuminated active MMIC devices have been developed. The models have been implemented in a commercial, industry-standard microwave circuit simulator (HP's MDS), and have been verified through the simulation not only of device behaviour but of the overall circuit behaviour of the MESFET VCO as well.

Black‐box noise modeling of GaAs HEMTs under illumination

“…As a matter of fact, the inherent isolation between the electronic and the optical signals allows achieving an optical control of these transistors to perform various and crucial functions for high‐frequency electronic circuits (e.g. gain control of amplifiers, frequency tuning or locking in oscillators, and phase shifting in phase shifters) . Despite that several studies have been devoted to the investigation of the behavior of the GaAs HEMT under optical illumination , the noise performance has been barely analyzed with light , while the attention has been mainly focused on the DC, small signal, and large signal characteristics .…”