Modelling and characterization of a travelling-wave electro-optic modulator on InP

Abstract

Abstract. A fast travelling-wave Mach-Zehnder modulator is modelled and designed using a rigorous vectorial analysis. In order to investigate propagation characteristics, velocity and microwave loss, the semiconductor layer stack and the lossy electrodes are modelled using the method of lines. The microwave field distribution is determined, design curves are derived and the cross-sectional dimensions of the modulator are optimized. The loss of the fabricated device agrees very well with small signal measurements up to 40 GHz and HFSS simulations.

High-Speed Pin-Traveling Wave Photodetector Based on a Semiconductor Optical Amplifier Layer Stack on Semi-Insulating Inp Substrate

“…The optical and electrical field distribution is presented in Figure 4 and shows that the maximum optical and electrical field intensity is inside the depleted waveguide layers of Q (1.55) and Q (1.25). Due to high conductivity of the nInP buffer layer with a doping level of 1e18 /cm 3 , the mode is nearly microstrip [15]. Figure 5 demonstrates the microwave attenuation, microwave index and real part of the impedance simulated at 120 GHz frequency as a function of gold thickness d Au , signal electrode width W sig , ridge width W ridge , and gap between the signal and the ground electrode W gap , respectively.…”

“…In current article, we analyzed a pin-TWPD which its layer stack has previously utilized in a SOA on highly doped n-InP substrate [8]. Then, this layer stack has used to realize a 40 GHz Mach-Zehnder interferometer (MZI)-based traveling-wave modulator [13,15]. In this paper, we changed the layer thicknesses and the ridge width of the MZI-modulator to reach a higher bandwidth while keeping the capability of monolithic integration with passive and active components such as AWG, SOA, and laser [13].…”