Modelling and analysis of crosstalk induced noise effects in bundle SWCNT interconnects and its impact on signal stability

Bagheri, Amin; Ranjbar, Mahboubeh; Haji-Nasiri, Saeed; Mirzakuchaki, Sattar

doi:10.1007/s10825-017-1028-1

Cited by 11 publications

(9 citation statements)

References 39 publications

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“…It is evidently that the mean free path (MFP) of MLGNR is strongly dependent on the impurity concentration n i of interlayer dielectric and the relative dielectric constant ε 2 of interlayer dielectric according to Equations (4) and (5). As reported in [16], the value of impurity concentration n i is determined by the quality of dielectric layer.…”

Section: A Mean Free Path Of Mlgnr Interconnectmentioning

confidence: 99%

“…Thus case 2 has a lesser time of reaching the steady-state value than case 1. The corresponding reason for the time of reaching the steady-state value of the case 3 lesser than case 1 is that the effective mean free path λ eff will increase as the relative dielectric constant ε 2 increases, thus give rise to a smaller distributed scattering resistance R ds of case 3 combining with the Equations (2), (4) and (5). In addition, the time of reaching the steady-state value of the proposed case 4 lower than all other cases is because the case 4 combines the advantages of the case 2 and case 3.…”

Section: B Two-line Coupled Mlgnr Interconnect Modelmentioning

confidence: 99%

“…current capacity problems [1]- [3]. Due to the outstanding electrical, mechanical and thermal properties, graphene material has captured considerable attention from the researchers that is regarded as a potential alternative to the traditional Cu for next-generation on-chip interconnect applications [4], [5]. High quality graphene has a long mean free path (MFP) on the order of several micrometers far over Cu material, which leads to a lower resistivity and achieves the ballistic transport at the shorter interconnects [6]- [8].…”

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confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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Section: A Mean Free Path Of Mlgnr Interconnectmentioning

confidence: 99%

Section: B Two-line Coupled Mlgnr Interconnect Modelmentioning

confidence: 99%

mentioning

confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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“…Resistances and capacitances are the main effective factors on the stability and the time domain responses of an inductance interconnect [18]. Some research efforts have addressed the different stability prospects of CNTs.…”

Section: Introductionmentioning

confidence: 99%

Taguchi Approach and Response Surface Analysis for Design of a High-performance Single-walled Carbon Nanotube Bundle Interconnects in a Full Adder

Ghorbani

Kashyzadeh

2020

IJE

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In this study, it was attempted to design a high-performance single-walled carbon nanotube (SWCNT) bundle interconnects in a full adder. For this purpose, the circuit performance was investigated using simulation in HSPICE software and considering the technology of 32-nm. Next, the effects of geometric parameters including the diameter of a nanotube, distance between nanotubes in a bundle, and width and length of the bundle were analyzed on the performance of SWCNT bundle interconnects in a full adder using Taguchi approach (TA). The results of Taguchi sensitivity analysis (TSA) showed that the bundle length is the most effective parameter on the circuit performance (about 51% on the power dissipation and 47% on the propagation delay). Moreover, the distance between nanotubes greatly affects the response compared to other parameters. Also, response surface method (RSM) indicated that an increase in the length of interconnects (L) improves the output of power dissipation. As the width of interconnects (W) and diameter of CNTs (D) increase the power dissipation also increases. Decrease in the distance between CNTs in a bundle (d) leads to an increase in power dissipation. The highest value of power dissipation is achieved if the maximum values for the parameters of length and width of interconnects (L, W), and diameter of CNTs (D) and the minimum value of the distance between CNTs in a bundle (d) are considered. It is also revealed that an increase in the length of interconnects (L) increases the propagation delay. Eventually, the optimum parameters are reported and the performance of the optimized system is compared using different methods (TA and RSM). Results indicate that the difference between the performance of optimal design of SWCNT bundle interconnects in a full adder predicted by different methods is less than 6% which is acceptable according to engineering standards.

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“…As the feature size of very large-scale integrated (VLSI) circuits is scaled down to the nanometer order, various performance degradation and stability problems on the conventional Cu interconnects have emerged in recent years [1][2][3]. Graphene, as a promising candidate for replacing the common copper, has attracted the intensive interest of many researchers in terms of its excellent electrical, mechanical and thermal properties [4,5]. Compared with the copper material, high quality graphene has a long mean free path on the order of several micrometers, which can result in a lower resistivity and achieving the ballistic transport at shorter interconnects.…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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Modelling and analysis of crosstalk induced noise effects in bundle SWCNT interconnects and its impact on signal stability

Cited by 11 publications

References 39 publications

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Taguchi Approach and Response Surface Analysis for Design of a High-performance Single-walled Carbon Nanotube Bundle Interconnects in a Full Adder

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

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