2012
DOI: 10.1021/jp306160c
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Modeling with Hybrid Density Functional Theory the Electronic Band Alignment at the Zinc Oxide–Anatase Interface

Abstract: The band alignment at semiconductor interfaces can be theoretically computed using periodic slab models together with hybrid functional DFT methods in which HF exchange mixing coefficients are properly chosen (as justified by their relationship with the dielectric constant) and the calculated electrostatic potential inside each slab is used as reference for the band edge energies. This principle is applied here to the interface between wurtzite-type ZnO and anatase-type TiO 2 , two oxides with nearly identical… Show more

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Cited by 80 publications
(72 citation statements)
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References 54 publications
(80 reference statements)
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“…It has been proposed on the basis of GW-type theory and checked for several semiconductors [21,[25][26][27][28][29] that for the PBE0 functional, the optimal fraction of exact exchange to reproduce band gaps can be determined as α = 1/ ∞ , where ∞ is the electronic (high-frequency) dielectric constant, which should be computed in self-consistency with α [27]. In the present work, the dielectric constant has been obtained computing the electric polarization under an external electric field, by means of the Berry phase theory [30][31][32].…”
Section: Methodsmentioning
confidence: 99%
“…It has been proposed on the basis of GW-type theory and checked for several semiconductors [21,[25][26][27][28][29] that for the PBE0 functional, the optimal fraction of exact exchange to reproduce band gaps can be determined as α = 1/ ∞ , where ∞ is the electronic (high-frequency) dielectric constant, which should be computed in self-consistency with α [27]. In the present work, the dielectric constant has been obtained computing the electric polarization under an external electric field, by means of the Berry phase theory [30][31][32].…”
Section: Methodsmentioning
confidence: 99%
“…To obtain the valence-and conduction-band discontinuities, we used an electrostatic potential-based alignment method [9,26] following a three-step computational procedure. The first step is the determination of the appropriate a value for each bulk semiconductor, carried out as said above.…”
Section: Model and Computational Techniquementioning
confidence: 99%
“…A similar approach has been followed by Conesa with the aim of properly aligning the VB and CB edges of two interfaced semiconducting oxides, specifically anatase TiO 2 and ZnO [63]. In this approach the mixing parameter a has been fitted to the experimental dielectric constant (a = 1/e ? )…”
Section: The Band Gap and Band Alignment Problemmentioning
confidence: 99%
“…In this way, not only the band gaps of the two oxides have been properly reproduced, but it was also possible to find that the conduction and valence bands of ZnO will lie ca. 0.3 eV lower in energy than those of anatase, influencing the way in which photogenerated electrons and holes will be routed in photocatalytic systems which include interfaces between these two oxides [63]. What is probably the most detailed and extended analysis of the band alignment problem for an oxide semiconductor has been recently reported by Migani et al for the case of methanol adsorption on rutile TiO 2 (110) [64,65].…”
Section: The Band Gap and Band Alignment Problemmentioning
confidence: 99%