Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls

Mojaver, Hassan Rahbardar; Valizadeh, Pouya

doi:10.1109/ted.2018.2846219

Cited by 7 publications

(10 citation statements)

References 31 publications

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“…For instance, in evaluating the reverse gate-leakage of AlGaN/GaN HFETs Rahbardar et al have observed that at less negative values of V GS , gate-leakage is smaller in conventional mesa HFETs compared to devices with the same overall gate width but comprising of fin-type isolation features. They have justified this observation by substantiating the dominance of leakage at the gate-covered isolation feature sidewalls over the leakage through the AlGaN barrier at less negative values of V GS [6,14]. They have also attributed the lack of substantial difference between the values of I G for more negative values of V GS among these devices to the significance of leakage through the equally wide barrier of the explored devices over the sidewall leakage for this latter range of V GS [6].…”

Section: Introductionmentioning

confidence: 78%

“…They have justified this observation by substantiating the dominance of leakage at the gate-covered isolation feature sidewalls over the leakage through the AlGaN barrier at less negative values of V GS [6,14]. They have also attributed the lack of substantial difference between the values of I G for more negative values of V GS among these devices to the significance of leakage through the equally wide barrier of the explored devices over the sidewall leakage for this latter range of V GS [6].…”

Section: Introductionmentioning

confidence: 78%

“…However, problems such as excessive reverse gate-leakage [1][2][3] still hamper their full-scale commercialization. In order to understand the origin of the reverse gate-leakage in these HFETs, several mechanisms have been investigated so far [4][5][6][7][8], which depending on the bias and temperature conditions, the pertinence of these mechanisms in describing the leakage behavior might differ. For instance, in polar III-nitride HFETs for large negative values of gate-source bias (V GS ), due to the presence of a strong electric field across the barrier, Fowler-Nordheim (FN) tunneling has been demonstrated to be the dominant leakage mechanism [6,[8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…In addition to the leakage through the AlGaN barrier, leakage between the gated sidewalls of the isolation features and the 2D electron gas (2DEG) has been also demonstrated to be worthy of consideration [6,[14][15][16][17]. For instance, in evaluating the reverse gate-leakage of AlGaN/GaN HFETs Rahbardar et al have observed that at less negative values of V GS , gate-leakage is smaller in conventional mesa HFETs compared to devices with the same overall gate width but comprising of fin-type isolation features.…”

Section: Introductionmentioning

confidence: 99%

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The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs

Aghayan,

Valizadeh

2023

Phys. Scr.

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Reverse gate-leakage current of AlGaN/GaN heterojunction field-effect transistors (HFETs) realized on array of submicron sized fins and conventional mesa isolation feature geometries is investigated at room temperature and zero drain-source bias. For each of the abovementioned device categories, the significance of leakage from the top surface gate as well as gated etched GaN surfaces, especially sidewalls, is studied for a wide range of gate-source voltages (VGS) (i.e. below and above the threshold voltage). It is proven that in the explored fin-type HFETs, for all values of VGS leakage through the gated GaN surfaces, especially the sidewalls, is more significant than the leakage from the top surface gate. This is while in the mesa category, the sidewall leakage is of importance only at less negative values of VGS, and leakage from the top surface gate substantially takes over at more negative VGS values. The discrepancy in the dominance of the aforementioned leakage paths at more negative VGS values among the explored fin and mesa-type HFETs is demonstrated to be due to the stronger electric field across the barrier in the gated region of the mesa-type HFET for this range of VGS. While in the explored fin-type HFETs Ion/Ioff ratio is as high as 2×10^7, the total amount of reverse gate-leakage at all values of VGS is substantially larger compared to the mesa category sharing an equal value of the overall gate width, which substantiates the significance of leakage through etched GaN surfaces in devices composed of larger number of sidewalls, incorporating larger area of gate-overlapping etched GaN surface.

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Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs

Aghayan,

Valizadeh

2023

Phys. Scr.

Self Cite

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“…[4] However, process damages from the aforementioned "invasive" isolation techniques may lead to severe leakage path or electron-trapping effect, endangering device performance. [5][6][7][8] Compared with other leakage paths including gate leakage, surface leakage, and buffer leakage, isolation leakage plays an important role in determining the off-state characteristic of the HEMT device. [9] Through the optimization of passivation in isolation, [10][11][12][13] the off-state leakage current and the breakdown characteristic of the HEMT device can be dramatically improved.…”

Section: Introductionmentioning

confidence: 99%

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Dai

Zhao

Luo

et al. 2023

Physica Rapid Research Ltrs

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Herein, polarization‐induced self‐isolation free from process damages in AlGaN/GaN high‐electron‐mobility transistor (HEMT) by the incorporation of lateral‐polarity structure (LPS) is demonstrated. The incorporation of LPS into the AlGaN/GaN heterojunction shows that 2D electron gas (2DEG) is formed in the III‐polar heterojunction but depleted in the N‐polar counterpart. A large lateral barrier height of 3.5 eV between the III‐polar and N‐polar domain boundary is revealed and buffer leakage is proved to be responsible for the weakened isolation characteristics. To suppress the buffer leakage, the influence of the AlGaN buffer on the leakage current is comprehensively investigated. Compared to pure GaN film and AlGaN/GaN heterojunction, two‐terminal isolation leakage current in AlGaN/GaN/Al0.2Ga0.8N heterojunction is greatly reduced by about nine orders of magnitude to as low as 10−11 A as experimentally confirmed. The incorporation of LPS into AlGaN/GaN heterojunction provides a novel planar isolation technique with excellent device performance by eliminating the isolation leakage path.

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Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current

Zhang

Zhou

et al. 2020

Solid-State Electronics

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Modeling the Reverse Gate-Leakage Current in GaN-Channel HFETs: Realistic Assessment of Fowler–Nordheim and Leakage at Mesa Sidewalls

Cited by 7 publications

References 31 publications

The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs

The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs

Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure

Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current

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