Modeling the optical properties of AlSb, GaSb, and InSb

Djurišić, A; Li, E.H.; Rakić, Aleksandar D.; Majewski, M.L.

doi:10.1007/s003390050006

Cited by 19 publications

(5 citation statements)

References 2 publications

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“…Figure 1 shows the real and imaginary parts of the index of refraction of GaSb. The experimental data of Aspnes and Studna [34], represented by circles are shown for comparison, * denotes data of Ferrini et al [35] used for the model parameter determination in this work, solid curves denote our calculations (thick curve-adjustable broadening, thin curve-Lorentzian broadening), while the dashed curve denotes the modified Adachi's model [36]. Figure 2 depicts the real and imaginary parts of the dielectric function of GaSb.…”

Section: Resultsmentioning

confidence: 99%

The model dielectric function: application to GaSb and InP

Djurišić¹,

Chan²,

Li³

2001

Semicond. Sci. Technol.

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In this work we propose an analytical expression for the complex dielectric function which includes both discrete and continuum exciton effects. The model has been obtained by accurate introduction of Lorentzian broadening into Eliott's formula. Accurate introduction of broadening ensures that our model does not exhibit singularity at zero, which is present in the model proposed by Holden et al (T Holden, P Ram, F H Pollak, J L Freeouf, B X Yang and M C Tamargo 1997 Phys. Rev. B 56 4037). We have applied our model to the dielectric function data for GaSb and InP. Excellent agreement with the experimental data has been obtained for both materials. We show that agreement with the experimental data below the absorption edge can be further improved if the adjustable broadening modification is employed.

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Section: Resultsmentioning

confidence: 99%

The model dielectric function: application to GaSb and InP

Djurišić¹,

Chan²,

Li³

2001

Semicond. Sci. Technol.

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“…Figure 2(b) shows that the corresponding QBIC resonance wavelength λ (θ = 6 • ) of γ = −0.05, −0.15 and −0.25 are 1335.14 nm, 1332.39 nm and 1330.26 nm, respectively, which correspond to the following three existing materials GaAs, AlSb, InP, respectively. Their refractive indices at resonant wavelengths λ are approximately [49][50][51] 3.4, 3.3 and 3.2, as shown in Fig. 6.…”

Section: Gh Shift Enhancementmentioning

confidence: 89%

“…The refractive index sensitivity is S = ∆D GH /∆n air = 1.9 × 10 6 µm/RIU, which is significantly higher than those in Refs. [50][51][52][53][54]. However, the sensitivity in Ref.…”

Section: Gh Shift Enhancementmentioning

confidence: 96%

Enhancing the Goos–Hänchen shift based on quasi-bound states in the continuum through material asymmetric dielectric compound gratings

Jiang 江,

Fang 方,

Zhan 占

2024

Chinese Phys. B

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Quasi-bound state in the continuum (QBIC) resonance is gradually attracting attention and being applied in Goos-Hänchen (GH) shift enhancement due to its high quality (Q) factor and superior optical confinement. Currently, symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry, but few cases are achieved by breaking the material symmetry. This paper proposes a dielectric compound grating to achieve a high Q factor and high reflection symmetry-protected QBIC resonance based on material asymmetry. Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to -980 times the resonance wavelength, and the maximum GH shift is located at the reflection peak with unity reflectance. This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.

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“…where α j and j are the model parameters with the subscript j discriminating different CPs. In practice, the validity of this method has been well documented for other semiconductors [22][23][24][25]. Besides, to account for the contribution from other higher lying CPs, a real constant ε ∞ has been particularly incorporated in our calculation.…”

Section: Description Of Optical Absorptionmentioning

confidence: 98%

Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model

Wang

Chen

Zhang

et al. 2010

Semicond. Sci. Technol.

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Radiant heat conversion performance dominated by the active layer of Ga 0.84 In 0.16 As 0.14 Sb 0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 × 10 17 cm −3 , which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 μm emitter and the 4-6 μm base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 μm. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

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Modeling the optical properties of AlSb, GaSb, and InSb

Cited by 19 publications

References 2 publications

The model dielectric function: application to GaSb and InP

The model dielectric function: application to GaSb and InP

Enhancing the Goos–Hänchen shift based on quasi-bound states in the continuum through material asymmetric dielectric compound gratings

Evaluating 0.53 eV GaInAsSb thermophotovoltaic diode based on an analytical absorption model

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