“…The above-mentioned anisotropy can originate from a crystallographic dependence of the reactions 15,23 , from an anisotropic diffusion of the reactants or of the by-products through the formed oxide, or from an uneven distribution of the oxide-induced strain field 26 . In this particular study, except for the AlAs0.866Sb0.134 layer and as already observed for AlGaAs-layers on (001)-oriented substrates, the lateral oxidation of an AlAsSb layer from a circular (or a square) mesa leads to an oxide aperture whose shape can be described as a linear combination of a circle and a square 17,46,47 . The square fraction, s, (ranging from 1 for a square aperture to 0 for a circular aperture) can then be used as a quantifying parameter of the degree of oxidation anisotropy 23,46 .…”