Abstract:In this work, we have theoretically investigated the intermixing effect in highly strained In 0.3 Ga 0.7 As/GaAs quantum well (QW) taking into consideration the composition profile change resulting from in-situ indium surface segregation. To study the impact of the segregation effects on the postgrowth intermixing, one dimensional steady state Schrodinger equation and Fick's second law of diffusion have been numerically solved by using the finite difference methods. The impact of the In/Ga interdiffusion on th… Show more
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