Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs

Mao, Ling‐Feng

doi:10.1016/j.sse.2007.11.008

Cited by 7 publications

(2 citation statements)

References 11 publications

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“…Such a phenomenon implies that the surface potential will decrease with the increase in channel electron velocity when the quantum coupling between the longitudinal and transverse components of channel electron motion has been considered. The details of the effects of quantum coupling on the surface potential and the gate leakage current have been reported in [9,10]. Table 1 shows the three initial energy eigenvalues after neglecting quantum coupling and after considering quantum coupling with different channel electron velocities for a ballistic MOSFET obtained by self-consistently solving the coupled Schrödinger-Poisson equations using the finite-difference method.…”

Section: Resultsmentioning

confidence: 99%

Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

Mao

2009

Pramana - J Phys

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Based on the analysis of the three-dimensional Schrödinger equation, the effects of quantum coupling between the transverse and the longitudinal components of channel electron motion on the performance of ballistic MOSFETs have been theoretically investigated by self-consistently solving the coupled Schrödinger-Poisson equations with the finite-difference method. The results show that the quantum coupling between the transverse and the longitudinal components of the electron motion can largely affect device performance. It suggests that the quantum coupling effect should be considered for the performance of a ballistic MOSFET due to the high injection velocity of the channel electron.

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Section: Resultsmentioning

confidence: 99%

Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

Mao

2009

Pramana - J Phys

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“…Hot carriers in organic semiconductor-based devices can reduce their effective activation energy [26]. Hot-carriers effects in silicon based-devices can reduce the barrier height [27], change its tunneling current [28], decrease its channel electron density [29], increase its gate leakage current [30], [31], change its surface potential [32], affect its capacitance [33], [34], be a physical origin of the ideality factor of Shockley diode current equation [35].…”

Section: Introductionmentioning

confidence: 99%

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

Mao

2020

IEEE Access

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Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling. An analytical and physical organic diode current equation that includes hot-carriers effect on the diode current equation has been proposed. When organic diode current equation has the same mathematical expression as Shockley diode current equation does, hot-carrier effects in organic semiconductor diodes can be a physical origin of the ideality factor and can reduce the barrier height for both band-like conduction mechanism and hopping conduction mechanism. The voltage-dependent ideality factor and temperature-dependent ideality factor predicted by the proposed model agree well with experimental data of organic semiconductor diodes reported in the literature. The proposed model can also physically explain the experimental relation between the ideality factor and the effective barrier height. The proposed model is useful in better physically understanding the carrier transport in organic semiconductor diodes. It also benefits to better optimize the organic semiconductor diode performance by tuning material properties.

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Energy relaxation of electrons impacts on channel quantization in nano-MOSFETs

Mao

2014

Appl. Phys. A

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Modeling the effects of the channel electron velocity on the channel surface potential of ballistic MOSFETs

Cited by 7 publications

References 11 publications

Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors

Hot-Carriers’ Effect on the Performance of Organic Schottky Diodes

Energy relaxation of electrons impacts on channel quantization in nano-MOSFETs

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