Modeling the Crust and Upper Mantle Applying an Optimization Method to Multiple Datasets: Surface Wave Dispersion, P-Receiver Function, and S-Waveform

Ghosh, Ranjana; Sen, Mrinal K.; Mandal, Prantik; Pulliam, J.; Dutta, Utpal

doi:10.1007/s00024-023-03236-8

Cited by 3 publications

(1 citation statement)

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“…For further manufacturing of modified semiconductor devices, ion-implantation techniques are generally employed in which ions in host materials alter their characteristics through introduction of metal ions (such as Ag + , Cu + , Fe + etc). In the recent past, ion-implanted semiconductor (IIS) plasmas have been explored [7][8][9][10], where quantum effects were studied. Also, Cd + ion trapped in semiconductor gallium-arsenide (GaAs) heterostructure chip has been fabricated [11] which gives an interesting opportunity of three species electronhole-ion (e-h-i) semiconductor magnetoquantum plasmas to determine their quantum collective effects on dispersive properties of magnetosonic propagation waves.…”

Section: Introductionmentioning

confidence: 99%

Magnetosonic waves in ion trapped semiconductor chip plasma with effect of exchange correlation potential and relativistic degeneracy

et al. 2022

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The generalized dispersion relation for the propagation of magnetohydrodynamic (MHD) waves in Cd⁺ ion trapped semiconductor electron-hole-ion plasmas is studied with effect of quantum corrections. The important ingredients of these corrections occurred due to Bohm potential, relativistic degeneracy, exchange-correlation potential and spin magnetization and have significant impact on the dispersion properties of perpendicular and oblique modes of MHD wave. The derived results are numerically analyzed by using the numerical parameters of GaAs, GaSb, GaN, and InP semiconductors plasmas. From the numerical analysis it is observed that for higher number density, the phase speed of magnetosonic wave is larger for the InP semiconductor, while for low number density plasma region, it gives lower values for GaAs semiconductor. Similarly the phase speed of magnetosonic wave for GaAs decreases with applied magnetic field for different regime of number density. Due to exchange-correlation potential it is found that the frequencies of magnetosonic waves are blue-shifted means that it has magnified the phase speed. It is also shown that frequency of oblique MHD wave for GaAs semiconductor plasmas increases (decreases) with number density of electrons (holes). The relativistic degeneracy term (γ) for given number density is numerically calculated (1.00011~1.0058) for all the above-mentioned semiconductors and it is observed that due to its mild numerical value it has not significant impact on graphical manipulation. The Alfven speed for above compound semiconductors with B₀≤10⁴G is also calculated which are in the permissible range of order 10⁴ cm/s to 10⁷ cm/s. The results are helpful to understand the energy transport in semiconductor plasma in the presence of magnetic field.

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