Modeling the charge density profile in thin film devices using SIMS profiling data

Abdollahi, Naeim; Gorji, Nima E.

doi:10.1016/j.spmi.2016.08.024

Cited by 4 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In fact, stresses accumulated during growth might even be enhanced by the conditions of post-growth treatment (heating, irradiation, external bias-voltage, moisture, etc.) in case of creation/annihilation of vacancies, partial sublimation or inter-diffusion of materials, redistribution of defects, rearrangement of interface charge, and readjustment of doping profile 136,137 that greatly affect the solar cell device performance.…”

Section: Cbd Znse On Epitaxial Cugase 2 -Basic Properties Of Cbdmentioning

confidence: 99%

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

Papadimitriou

2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

ZnSe thin films were processed in-vacuum by EBD and in-solution by CBD for comparative studies of CdS-buffer replacement of ZnO/CdS/Cu(In,Ga)Se 2 /Mo/glass solar-cells. ZnSe films deposited by EBD, at e-beam energies 11keV, on polycrystalline CuGaSe 2 , at 400 • C, were microcrystalline, with average grain-sizes 100nm, and (111)zinc-blende(ZB)-structure. The films exhibited compressive mismatch-stresses σ = −0.9 GPa. The absorption coefficient α = 6.2 × 10 3 cm −1 and the energy band-gap E g = 2.69eV indicated optical transparency suitable for buffer/solar-absorber configurations. In CBD, zinc-sulfate_(ZnSO 4 ) solution with selenourea_(SeC(NH 2 ) 2 ), ammonia_(NH 3 ), hydrazine_(NH 2 NH 2 ), and sodium-sulfite_(Na 2 SO 3 ) were processed at solution-bath temperature 70 • C. The growth-rates of ZnSe on glass_(1.2nm/min), epitaxial_CuGaSe 2 /GaAs(001)_(7.4nm/min), and polycrystalline_Cu(In,Ga)Se 2 /Mo/glass_(17.6nm/min) were strongly facilitated by substrate order, orientation, and conductivity. Mismatch-stresses switched from compressive σ = −0.5GPa of ZnSe_on_epitaxial_CuGaSe 2 /GaAs(001) to tensile σ = 1.1-1.9GPa of ZnSe_on_polycrystalline_Cu(In,Ga)Se 2 /Mo/glass. Film crystallinity was improved by post-growth annealing (300 • C,2h,Ar/N 2 ). The energy band-gap E g = 2.73-2.87eV was broadened with the increase of annealing-time. ZnSe films were deposited by CBD on polycrystalline Cu(In,Ga)Se 2 with ( 101)wurtzite(WZ)-structure. Following process-optimization, high quality ultra-thin films with (ZB)-structure were produced. The quality assessment of ZnSe films processed by cost-effective, easy-applicable, fast-rate, large-area, moderate-temperature CBD competes with that of EBD processed films and opens the perspective for strain-free CIGS TFSCs by lattice-matching of ZB/WZ-ZnSe bilayer to chalcopyrite sub-layer and ZnO over-layer.

show abstract

Section: Cbd Znse On Epitaxial Cugase 2 -Basic Properties Of Cbdmentioning

confidence: 99%