Modeling power and linewidth of quantum dot superluminescent light emitting diode

Guin, Shampa; Das, N. R.

doi:10.1063/1.5131550

Cited by 3 publications

(1 citation statement)

References 27 publications

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“…InP/InGaAsP heterostructures are the main type of structures used for obtaining quantum electronics devices, such as semiconductor lasers, superluminescent radiation sources, and photodiodes with a wavelength range from 1.20 to 1.65 µm which is the most important for the systems of fibre optic communication channels and fibre optic sensors [1][2][3][4][5][6]. The uniqueness of these structures is that InGaAsP solid solutions are isoperiodic to indium phosphide, which allows creating "perfect" heterojunctions suitable for wide application in engineering [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Васильев

Изотов

et al. 2021

kcmf

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The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of <111>, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

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Section: Introductionmentioning

confidence: 99%

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Васильев

Изотов

et al. 2021

kcmf

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Artificial intelligence approach for calculating electronic and optical properties of nanocomposites

Jahromi

Hamedi

2021

Materials Research Bulletin

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Modeling the electroluminescence of atomic wires from quantum dynamics simulations

Bustamante,

Todorov,

Gadea

et al. 2024

The Journal of Chemical Physics

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Static and time-dependent quantum-mechanical approaches have been employed in the literature to characterize the physics of light-emitting molecules and nanostructures. However, the electromagnetic emission induced by an input current has remained beyond the realm of molecular simulations. This is the challenge addressed here with the help of an equation of motion for the density matrix coupled to a photon bath based on a Redfield formulation. This equation is evolved within the framework of the driven-Liouville von Neumann approach, which incorporates open boundaries by introducing an applied bias and a circulating current. The dissipated electromagnetic power can be computed in this context from the time derivative of the energy. This scheme is applied in combination with a self-consistent tight-binding Hamiltonian to investigate the effects of bias and molecular size on the electroluminescence of metallic and semiconducting chains. For the latter, a complex interplay between bias and molecular length is observed: there is an optimal number of atoms that maximizes the emitted power at high voltages but not at low ones. This unanticipated behavior can be understood in terms of the band bending produced along the semiconducting chain, a phenomenon that is captured by the self-consistency of the method. A simple analytical model is proposed that explains the main features revealed by the simulations. The methodology, applied here at a self-consistent tight-binding level but extendable to more sophisticated Hamiltonians such as density functional tight binding and time dependent density functional theory, promises to be helpful for quantifying the power and quantum efficiency of nanoscale electroluminescent devices.

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Modeling power and linewidth of quantum dot superluminescent light emitting diode

Cited by 3 publications

References 27 publications

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Artificial intelligence approach for calculating electronic and optical properties of nanocomposites

Modeling the electroluminescence of atomic wires from quantum dynamics simulations

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