Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime

Ahmed, Rekib Uddin; Saha, Prabir

doi:10.1109/inis.2017.44

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2019

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“…Equation (6) has to be solved numerically in order to calculate the values of β. The expression for β is [27]:…”

Section: Introductionmentioning

confidence: 99%

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Modeling of Short P-Channel Symmetric Double-Gate MOSFET for Low Power Circuit Simulation

Ahmed

Saha

2019

Period. Polytech. Elec. Eng. Comp. Sci.

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In the present era, down scaling of complementary metal-oxide-semiconductor (CMOS) technology has lead the metal-oxide-semiconductor field-effect-transistor's (MOSFET) sizes to nanometer regime which in turn experiencing difficulties due to the effect of physical and technological perspective. Double-gate (DG) MOSFET is considered as a promising device to reduce the shortcoming and shrink down towards nanometer domain. This paper proposes electrostatic potential distribution and drain current models for the lightly doped symmetrical p-channel DG MOSFET. The analytic solution of potential distribution is derived by solving the 2D Poisson's equation incorporated with hole density through the superposition method. The drain current model has been explored by incorporating physical effects like threshold-voltage roll-off, channel length modulation and surface roughness scattering. Functionality of the models has been calculated in MATLAB and the obtained results are verified and compared with state of the art literature.

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“…Equation (6) has to be solved numerically in order to calculate the values of β. The expression for β is [27]:…”

Section: Introductionmentioning

confidence: 99%

“…The analytical expression of th V for a short p-channel DG MOSFET is [27]: The th V of a long p-channel DG MOSFET is expressed as:…”

Section: Introductionmentioning

confidence: 99%

Modeling of Short P-Channel Symmetric Double-Gate MOSFET for Low Power Circuit Simulation

Ahmed

Saha

2019

Period. Polytech. Elec. Eng. Comp. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime

Cited by 1 publication

References 12 publications

Modeling of Short P-Channel Symmetric Double-Gate MOSFET for Low Power Circuit Simulation

Modeling of Short P-Channel Symmetric Double-Gate MOSFET for Low Power Circuit Simulation

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