Modeling of thermal noise in short-channel MOSFETs at saturation

Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator

“…Though the accurate level of the noise spectrum cannot be predicted, the bias dependency of the simulated results are reasonable. Many experiments report that in the strong inversion and linear region, the llf spectrum is almost constant along with the gate bias (left) [7]. The right figure of Fig.…”

Thermal Noise in Modern CMOS Technology

“…• Chen and Deens' model Before Chen and Deen proposed their model in 2002 (Chen & Deen, 2002), all of the theories (Triantis, Birbas & Kondis, 1996;Klein, 1999;Scholten et al, 1999;Jin, Chan & Lau, 2000;Park & Park, 2000;Knoblinger, Klein & Tiebout, 2001) attributed the enhanced channel thermal noise to the hot carrier effect, following the similar arguments for the excess noise in field-effect transistors (Klassen, 1970;Baechtold, 1971;Takagi & Matsumoto, 1977;Jindal, 1986). Chen and Deen, however, considered the channel length modulation (CLM) effect and proposed the spectral density of the channel noise as (Chen & Deen, 2002) where E crit is the critical electrical field, Q inv is the total inversion charge in the gradual channel region, and L elec is the electrical channel length of the device (L elec = L eff − ΔL, where ΔL is the channel length of the velocity saturated region).…”

Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design

“…Following Grebene's approach [17] and approximating the solution to the lowest space harmonic, we obtain (7) From (5) and (7), the source-drain potential can be evaluated at and , as seen by (8) where is the built-in potential of the drain-to-substrate junction, is accounted for surface potential at strong inversion in (5b), and is given by (9) Since , (8) is clearly an implicit equation of the unknown , which can be solved numerically.…”